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        Facile preparation and performance of novel high-TC xBi(Ni1/2Ti1/2)O3-(1-x)Pb(Zr1/2Ti1/2)O3 piezoceramics

        Wanwan Ji,Shuai Feng,Bijun Fang,Xiangyong Zhao,Shuai Zhang,Jianning Ding,Haosu Luo 한국물리학회 2018 Current Applied Physics Vol.18 No.3

        High Curie temperature (TC) xBi(Ni1/2Ti1/2)O3-(1-x)Pb(Zr1/2Ti1/2)O3 (xBNT-(1-x)PZT, BNT-PZT) piezoelectric ceramics were prepared by the conventional ceramic processing. The composition-induced morphotropic phase boundary (MPB) and its influences on structure and electrical performance were investigated. The synthesized BNT-PZT ceramics exhibit rather pure perovskite structure, and densified microstructure morphology with uniform elementals distribution in both grains and grain boundaries. With increasing the content of Bi(Ni1/2Ti1/2)O3 (BNT), crystal structure of the BNT-PZT ceramics transform from tetragonal phase to rhombohedral phase, and dielectric response peaks change from narrow shape to very broad shape but all presenting dielectric frequency dispersion. The diffused and relaxation dielectric behavior can be fitted well by the quadratic law, and the Vogel-Fulcher law fitting provides additional information on the relaxation characteristic. The MPB effects are confirmed further by ferroelectric and piezoelectric properties measurements. High-TC combined with excellent piezoelectric performance can be realized in the BNT-PZT system, which presents promising applications in geothermal exploration, aerospace and related elevated temperatures fields.

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        Enhancing electrical properties of high-Curie temperature piezoelectric ceramics BNT-PZT and their mechanism

        Wanwan Ji,Bijun Fang,Xiangyong Zhao,Shuai Zhang,Xiaolong Lu,Xiaolong Lu 한국물리학회 2019 Current Applied Physics Vol.19 No.12

        Due to the urgent demands for high-Curie temperature (TC/Tm) piezoelectric materials in geothermal exploration, aerospace and related fields, high-TC/Tm ferroelectrics have attracted booming research attention. The high-Tm 0.25Bi(Ni1/2Ti1/2)O3-0.75 Pb(Zr1/2Ti1/2)O3 (0.25BNT-0.75PZT) ceramics were prepared by solid-state sintering method and via partial oxalate route, where the 0.25BNT-0.75PZT ceramics prepared via the partial oxalate route exhibit better electrical properties (Tm=232 °C (10 kHz), εm=10963, Pr=26.14 μC/cm2, Ec=15.61 kV/cm, d33=521 pC/N, d33* = 553.3 pm/V, Kp=47.1%, and Qm=21.6). The nano-scale domain configuration of the ceramics was revealed by piezoelectric force microscopy (PFM), and the relationship between the micro-structure and macro-electrical properties was analyzed. The ferroelectric phase transition mechanism was studied by temperature dependent Raman spectroscopy. The reduction of energy barrier of lattice distortion and polarization deflection is caused by nanometer-sized domain structure, low symmetric polar nano-regions and/or coexistence of multi-ferroelectric phases, contributing to the excellent electrical properties of the 0.25BNT-0.75PZT ceramics prepared via the partial oxalate route.

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