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Wang Zhenjie,Wang Yujuan,He Yuan,Zhang Ning,Chang Wei,Niu Yahui 한국통합생물학회 2020 Animal cells and systems Vol.24 No.5
Gastric cancer, one of the most common malignant tumors of the digestive tract, is devoid of effective treatment owing to its highly invasive ability. Aquaporins (AQPs), transmembrane water channel proteins, has been shown to be involved in the malignancy of gastric cancer. This study aims to investigate the pathophysiological roles of AQP-1 in gastric cancer. We first demonstrated quantitative real-time polymerase chain reaction analysis and found upregulation of AQP-1 in gastric cancer cell lines. Additionally, silence of AQP-1 inhibited cell proliferation via decrease of proliferating cell nuclear antigen (PCNA) and minichromosome maintenance complex component 2 (MCM2). Moreover, migration and invasion of gastric cancer cells were also suppressed by the interference of AQP-1. However, the tumorigenic mechanism of AQP-1 on gastric cancer is yet to be found. We demonstrated western blot analysis and found that knockdown of AQP-1 decreased protein expression of phospho (p)-GRB7 (growth factor receptor-bound protein 7) and led to a remarkable reduction of p-extracellular signalregulated kinase (ERK) via inactivation of RAS. In general, our findings indicated that AQP-1 facilitates proliferation and invasion of gastric cancer cells via GRB7-mediated ERK and Ras activation, illuminating a novel AQP-1-RAS/ERK molecular axis as regulator in gastric cancer progression and suggesting potential implications in the treatment of gastric cancer.
Hou Dianyun,Wang Wenbin,Yang Mengmeng,Li Zhihong,Xu Jingya,Wang Long,Fan Zhenjie,Wang Yaoyao 한국식물생명공학회 2020 Plant biotechnology reports Vol.14 No.4
Cornus officinalis is a traditional Chinese herbal medicine rich in active substances, such as iridoid glycosides, esters, polysaccharides, and tannins. C. officinalis replenishes the liver and kidney and retracts and removes phlegm. In this study, the candidate transcription factor bHLH40 from C. officinalis (CobHLH40) was predicted to be involved in iridoid glycoside biosynthesis. CobHLH40 was cloned from C. officinalis. Bioinformatics analysis was performed using the Protparatam, the ProtScale, and the SOPMA. CobHLH40 had a cDNA length of 2100 bp and a relative molecular mass of 63.32 kDa, and encoded 573 amino acids. The subcellular localization analysis indicated that CobHLH40 may be located in the nucleus. The comparison of multiple sequence alignments and phylogenetic relationships showed that the CobHLH40 was similar to the MYC2 of other plants, and that CobHLH40 had high homology with the MYC2 of Sesamum indicum. A prokaryotic expression vector was successfully constructed and transformed into the DE3 cells. The induction and expression of the fusion protein of CobHLH40 need further confirmation. The cloning and bioinformatics analysis results of CobHLH40, which may be related to iridoid glycoside synthesis, were screened and predicted for the first time on the basis of C. officinalis transcriptome sequencing. The temporal and spatial expression patterns of C. officinalis were also established. The CobHLH40 prokaryotic expression system provides a basis to further study its function.
Zhenjie Tang,Ma Dongwei,Zhang Jing,Jiang Yunhong,Wang Guixia,Zhao Dongqiu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating (HfO2)x(Al2O3)1-x film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found thatthe memory window and charge retention performance can be improved by adding Al atoms into pure HfO2; further,the memory capacitor with a (HfO2)0.9(Al2O3)0.1 charge trapping layer exhibits optimized memory characteristicseven at high temperatures. The results should be attributed to the large band offsets and minimum trap energylevels. Therefore, the (HfO2)0.9(Al2O3)0.1 charge trapping layer may be useful in future nonvolatile flash memory deviceapplication.
Zhenjie Tang,Jing Zhang,Yunhong Jiang,Guixia Wang,Rong Li,Xinhua Zhu 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO2)x(Al2O3)1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO2)0.1(Al2O3)0.9 or a (ZrO2)0.92(Al2O3)0.08 trapping layer, the memory device using the composition modulated (ZrO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO2) x(Al2O3)1-x film is a promising candidate for future nonvolatile memory device applications.
Theoretical Overview of Method Research on Informatization Promoting Enterprise Competitiveness
Jian Wang,Zhenji Zhang,Xiaolan Guan 보안공학연구지원센터 2014 International Journal of u- and e- Service, Scienc Vol.7 No.6
The existing and competitive environment of enterprises faces severe challenges in the process of global economic integration, and how the enterprises win the competitive advantages in the market to achieve sustainable development has become the focus of attention. With the rapid development of internet, information construction and application have gradually become important means to win the competitive advantages for enterprises. This thesis summarizes the method research status of enterprise informatization promoting competitiveness conducted by domestic and foreign scholars through analysis from the perspective of driving force (namely, external environment, internal resource & capabilities and internal & external integration) of enterprise competitiveness, which is useful to the construction of enterprise informatization and the promotion of the competitive advantages and provides theoretical basis and policy suggestions for further study of enterprises informatization construction and competitive advantage.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Zhao, Dongqiu,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.
Tang, Zhenjie,Zhang, Jing,Jiang, Yunhong,Wang, Guixia,Li, Rong,Zhu, Xinhua The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO<sub>2</sub>)<sub>0.1</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.9</sub> or a (ZrO<sub>2</sub>)<sub>0.92</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.08</sub> trapping layer, the memory device using the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film is a promising candidate for future nonvolatile memory device applications.
Influence of FeSe doping on superconducting properties of MgB2 by hybrid microwave method
Cheng Cheng,Zhenjie Feng,Qing Li,Xu Wang,Chuan Yu,Hao Chu,Ya Yang,Changqin Liu,Yiming Cao,Zhe Li,Jingzhe Chen,Chao Jing,Shixun Cao,Jincang Zhang 한국물리학회 2017 Current Applied Physics Vol.17 No.11
The effect of FeSe doping on the physical properties of MgB2 is studied. Bulk samples of the FeSe doped MgB2 with weight ratio x ðFeSe : MgB2Þ ¼ 0%; 3%; 7% and 10% were prepared by hybrid microwave method. It is proved that FeSe is not stable together with MgB2. Fe2þ enters into MgB2 lattice, some Mg2þ and Se2『 are combined into the new impurity compound MgSe. The superconducting transition temperature (Tc) slightly decreased with increasing doping content of FeSe from R-T and M-T curves, which results from the substitution of Mg2þ by Fe2þ in the MgB2 lattice. The Jc increase slightly with the FeSe doping content increasing from 3 wt % to 10 wt %, which results from the increasing MgSe impurity pinning centers.