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Realization of p-Type ZnO Using Zn3As2 and Zn3P2 as Doping Source Materials
( Veeramuthu Vaithianathan ),( Sang Sub Kim ),( Byung Teak Lee ) 대한금속재료학회 ( 구 대한금속학회 ) 2005 ELECTRONIC MATERIALS LETTERS Vol.1 No.2
A report on the preparation of arsenic-, and phosphorus-doped p-type ZnO films is presented, which involves As and P incorporation during pulsed laser deposition using Zn3AS2 and Zn3P2 as the doping source materials, respectively. The room temperature Hall measurements reveal that the n-type arsenic-, and phosphorus-doped as-grown ZnO films show p-type behavior after being thermally annealed at 200℃, and at temperatures between 600℃ and 800℃, respectively. This indicates that only a proper thermal annealing treatment favors p-type conversion. A photoluminescence emission associated with the acceptors is observed only in the p-type ZnO films; it was not present in the films showing the n-type behavior. X-ray absorption near-edge structure measurements reveal both As and P occupy O in the ZnO lattice, meaning that Aso and Po are the acceptors in the arsenic-, and phosphorus-doped, p-type ZnO films. Our results suggest that Zn3As2 and Zn3P2 are promising p-type doping source materials for use in preparing reliable p-ZnO.