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Low temperature electronic transport in sputter deposited a-IGZO films
Nicolas Martin,Tomas Nyberg,Vassilios Kapaklis 한국물리학회 2014 Current Applied Physics Vol.14 No.11
We report on the electrical properties of a-IGZO thin films prepared by reactive sputtering. Without oxygen injection, dc resistivity measured at room temperature is r300K ¼ 1.22 103 Um. The lowest resistivity r300K ¼ 4.86 105 Um is obtained at a certain oxygen supply into the deposition process. Hall effect measurements of these films reveal a metallic-like behavior from mobility and carrier concentration vs. temperature in the range 15e300 K whereas films deposited without oxygen or for the highest oxygen flows behave as semiconductors. These enhanced electrical properties are connected to the oxygen vacancies and the local coordination structure around the In3þ cations.