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Vaibhava Srivastava,R. K. Chauhan,Pooja Lohia 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.1
This work is reporting a numerical simulation of the solar cell structure, FTO/PCBM/CsSn 0.5 Ge 0.5 I 3 /Spiro-OMeTAD/Au. Basically, cesium-based perovskite CsSn 0.5 Ge 0.5 I 3 have been introduced as absorber layer separately due to its better stability and enhanced optical properties. In the same cell structure, PCBM and Spiro-OMeTAD are incorporated as electron transport layer and hole transport layer respectively. Spiro-OMeTAD has been used in place of different hole transport layer after rigorous analysis of their properties. The parameters of MoO 3 based devices such as thickness, bandgap, defect density of absorber layer and operating temperature have been varied at some extent to obtain the optimum value. The optimized solar cell structure FTO/PCBM/CsSn 0.5 Ge 0.5 I 3 /MoO 3 /Au with power conversion effi ciency of 19.09% has been achieved. SCAPS-1D has been used for this simulation works. These idea revels the further improvement in such devices in future.
Vaibhava Srivastava,R. K. Chauhan,Pooja Lohia,Shivangi Yadav 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.3
Perovskite is the most appropriate material for designing of thin fi lm solar cells. In this work, inorganic perovskite solar cell which is lead free, stable and eco-friendly has been proposed with confi guration FTO/Nb 2 O 5 /CsSn 0.5 Ge 0.5 I 3 /SpiroOMeTAD/Au. For high carrier mobility, Nb 2 O 5 is used as ETL layer in place of PCBM which also diminishes the cost of device. Proposed solar cell is investigated against limiting factors such as working point temperature, defect density, donor carrier concentration and thickness of perovskite absorber layer. The optimized performance of the proposed structure using Nb 2 O 5 as ETL layer are as follows: PCE = 28.25%, V oc = 1.2789 V, J sc = 26.3470 mA/cm 2 and FF = 83.85%. SCAPS-1D is employed for the simulation of proposed perovskite solar device. The proposed perovskite solar cell has the potential to revoke instability and toxicity issues which are the major concerns of present day’s solar cells.
Kamal Mishra,R. K. Chauhan,Rajan Mishra,Vaibhava Srivastava 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.1
An optoelectronic device to detects incident light and convert it into an electrical signal is known as a photodetector. To obtain higher responsivity and detectivity of photo detector, suitable materials are required. In the present study, an inorganic leadfree perovskite CsSn 0.5 Ge0.5 I3 material is utilized as an active layer for photodetector applications, together with Nb2 O5 as electron transport layer (ETL) and CuSbSe2 as hole transport layer (HTL). The perovskite photodetector (PePd) is simulated by employing Solar Cell Capacitance Simulator-One Dimensional (SCAPS-1D) software. We have thoroughly investigated the impact of various parameters such as the defect density and donor concentration of active layer, series and shunt resistance, the thickness of active layer and metal work function of back contact using numerical simulation. Under standard AM 1.5G irradiance, we obtained the detectivity (D*) and responsivity (R) of the proposed photodetector are 3.3 × 10 13 Jones and 0.54 AW -1 respectively. The proposed device performances reveal that it is suitable for high performance photodetector.