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RISS 인기검색어
- 검색키워드
- 저자 : Vagif Nevruzoglu (검색결과 2 건)
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Vagif Nevruzoglu,Melih Manir,Gizem Ozturk 한양대학교 세라믹연구소 2020 Journal of Ceramic Processing Research Vol.21 No.2
In present study, Ag/n-Si Schottky diodes were produced by vacuum evaporation method at two different substratetemperatures (200 K and 300 K) and structural, optical, electrical properties were investigated. X-ray diffraction studiesshowed that the textures of the Ag films are cubic with a strong (111) preferred direction. Field emission scanning electronmicroscopy (FESEM) images revealed that the Ag layer coated at 200 K substrate temperature consisted of nano clusters ofequal size (12-15 nm) and the Ag layer consisted of islets of different sizes (80-100 nm) at 300 K substrate temperature. Theideal factor (n), barrier height (φB), saturation current (I0) and series resistance (RS) for Schottky diodes 200 K and 300 Ksubstrate temperature produced, obtained by using I-V measurements respectively 1.11, 0.85 eV, 0.0014 ηA, 3.45 KΩ and 3.68,0.78 eV, 0.05 ηA, 5.51 KΩ. Donor density (ND) and flat band potential (EFB) for Schottky diodes 200 K and 300 K substratetemperature produced, obtained by using C-V measurements respectively 1.1 × 1015 cm-3, 0.52 V and 1.4 × 1016 cm-3, 0.34 V. When the characteristic properties of Schottky diodes are examined, it is understood that the differences depending on themethod are caused by the distribution of homogeneous and equal sized nano clusters on the Si surface of the Ag layer producedat 200 K substrate temperature.
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Vagif Nevruzoglu 한양대학교 세라믹연구소 2017 Journal of Ceramic Processing Research Vol.18 No.7
Un-doped and Na doped CdS thin films were deposited by chemical bath deposition method. The effects of Na doping onstructural, optical and electrical properties of CdS thin films and n-CdS/p-Si heterojunction were investigated. Crystalstructure of all CdS thin films was cubic with (111) preferred direction. High Na doping detoriated crystal structure andamorphous structure obtained for 3% Na doping. The grain size of thin films was decreased from 6.5 nm to 4.8 nm and surfacehomogeneity increased with Na doping. All samples had high band gap for CdS (2.42 eV) due to quantum size effect and bandgap of the samples was increased 3.65 eV to 3.84 eV as a function of Na content. Na doped CdS samples had higher resistivityand carrier concentration than that of un-doped CdS. Ideality factors of Na doped n-CdS/p-Si heterojunctions were greaterthan unity due to nanostructered CdS, which indicates that the diode exhibits a nonideal behavior. It was determined thatphotovoltaic behavior of n-CdS/p-Si prepared with high Na doped CdS dependent on different semiconductor structure (suchas depend on function of Na2SiO3 phase) occurred interface of CdS and Si.
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