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RISS 인기검색어
- 검색키워드
- 저자 : V. N. Ramakrishnan (검색결과 4 건)
- 무료
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Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter
Nilesh Kumar Jaiswal,V. N. Ramakrishnan 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.3
A vertical GaN reverse trench-gate power MOSFET (RT-MOSFET) device is proposed. This Vertical RT-MOSFET features the negative incline of broaden-trench sidewalls at the bottom of the gate. Numerical device simulations using TCAD have been carried out for device and circuit performance study and analysis. The device performance like transfer characteristics, on-state, off -state characteristics, capacitance–voltage characteristics is observed. The simulation results are shown in comparison to the conventional such as perpendicular trench-gate (UT), and trapezoidal trench-gate (VT)-MOSFET devices. The RT-MOSFET has a ~ 9% and ~ 20% reduced on-state resistance (R on ), ~ 6% and ~ 10% enhanced electrical breakdown voltage (V br ), and ~ 21% and ~ 46% superior Baliga’s fi gure of merits ( V2 br∕Ron) compared to UT-MOSFET and VT-MOSFET, respectively. Next, we obtain lower energy loss using TCAD Mixed-mode simulation for DC-DC boost converter circuit performance with diff erent voltage. The RT-MOSFET saves ~ 30% and ~ 76% energy loss at 100 V, ~ 43%, and ~ 75% energy loss at 200 V and ~ 54% and ~ 87% energy loss at 400 V during DC-DC converter application compared to UT-MOSFET and VT-MOSFET, respectively.
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Conductive Filament Variation of RRAM and Its Impact on Single Event Upset
H. M. Vijay,V. N. Ramakrishnan 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.3
Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high radiation applications such as medical devices, aircraft, and space. The impact of radiation aff ects the resistance of RRAM. The resistance depends on the dimensions of the conductive filament. In this work, we have analyzed the impact of radiation on RRAM resistance with respect to the length and width of the conductive filament (CF). For our simulations, radiation is modeled as a double exponential current pulse (DECP). Diff erent values of DECP are injected to mimic diff erent radiation doses. Our simulations on the RRAM device demonstrate that high radiation dose aff ects the device performance in terms of low resistance state (LRS) and high resistance state (HRS). There is no distinction between LRS and HRS due to high radiation dose.
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H. M. Vijay,V. N. Ramakrishnan 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.5
In the present as well as in the future world, the interaction of a person with the connected devices will be more. It has been predicted that these interactions will be approximately 4,800 times per day. Hence, the data will be acquired from the sensors and it will be processed. The aforementioned task needs fast and voluminous data storage as well as real-time processing. To accelerate the processing, emerging memory devices and technologies are the promising candidates for non-volatile, low-power, high- speed, low- cost, and capable of handling big data. The MRAM, FeRAM, Nano-RAM, Racetrack, and Resistive Random Access Memory (RRAM) are some of the strong candidates from the family of memory devices. In RRAM, the conduction is due to the formation and rupturing of the filament. The filament growth modulates the switching of the RRAM from the high resistive state (HRS) to the low resistive state (LRS) and vice-versa. The diameter and length of the filament are two important parameters that govern the resistance of the RRAM. In this work, we studied the impact of filament length and width variation on resistance of the RRAM. For our simulation work, the Stanford university RRAM model is employed. All the simulations are carried out using Cadence EDA. In the fi rst case, we have neglected the width of the filament. The length of the filament is modeled as an initial gap (x0). The initial gap represents the distance from the tip of the filament to the top electrode. The initial gap is varied from 0.2 to 1.7 nm which corresponds to RRAM resistance of 115.8 Ω and 32.9 kΩ respectively. In the second case, the width of the filament (w0) and initial gap length both are varied alternatively. The width of the filament is varied from 0.5 to 5 nm. The initial gap length is varied from 0 to 3 nm. It has been observed that the HRS and LRS of RRAM are 248 kΩ and 3.03 kΩ respectively.
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Effect of growth temperature on gallium nitride nanostructures using HVPE technique
Munawar Basha, S.,Ryu, S.R.,Kang, T.W.,Srivastava, O.N.,Ramakrishnan, V.,Kumar, J. North-Holland 2012 Physica E, Low-dimensional systems & nanostructure Vol.44 No.9
The growth of hexagonal wurzite one dimensional (1D) gallium nitride (GaN) nanostructures on sapphire substrates using hydride vapor phase epitaxy (HVPE) process was carried out at two different temperatures (973K and 1023K). The GaN nanoneedles were formed at 973K and hexagonal nanorods get formed at 1023K. The morphologies of these nanostructures were studied using high resolution scanning electron microscope. X-ray diffraction and micro-Raman spectroscopy measurements confirmed that the as grown GaN nanostructures are of hexagonal wurtzite structure without any oxide phase. The emission properties of these nanostructures have been investigated using photoluminescence.
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