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Optical Absorption Studies of GaSbN Grown by Using Liquid Phase Epitaxy
이진구,채연식,Aniruddha Mondal,김미라,Sunanda Dhar,Tushar Dhabal Das 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.4
Optical absorption measurements were performed on GaSbN semiconductors with nitrogen concentrations in the layers ranging from 0.9 to 1.7%. The surface morphology was examined by using an atomic force microscope. The X-ray diffraction measurements confirmed the nitrogen concentrations in the layers. The reduction of the band gap with increasing amount of nitrogen in the layers was confirmed by their optical band edge absorption in the Fourier-transform infrared spectroscopy measurements. The absorption spectrum of the GaSbN semiconductor with a nitrogen concentration of 1.7% was fitted using the band anticrossing model (BAC) model.