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Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates
Min Yang,안형수,Masahito Yamaguchi,Nobuhiko Sawaki,Tomoyuki Tanikawa,Yoshio Honda 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.6
The selective growth of semi-polar (11-22) GaN layers on patterned Si (311) substrates was performed by using metal organic vapor phase epitaxy (MOVPE) without using a SiO2 mask to decrease the density of crystal defects that may be caused by the existence of the mask material. We found that even without using a SiO2 mask (11-22) GaN layers could be selectively grown on Si (111) facets when the mesa width of the patterned silicon substrates was smaller than 1 micrometer. Low temperature (7 K) cathodoluminescence (CL) measurement confirmed that the intensity of the emission peak arising from the crystal defect region was remarkably decreased by the use of a maskless selective growth method. Low-temperature CL measurements were also performed on InGaN multiple-quantum-well (MQW) structures grown on (11-22) GaN templates. From the CL spectra, we could observe that the InGaN MQW structure grown on a (11-22) GaN template, which was selectively grown without a SiO$_{2}$ mask, had fewer crystal defects than that grown on a (11-22) GaN template formed by using the conventional selective growth method.
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