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Factors Affecting Infrastructure Connectivity: An Indian and Vietnamese Perspective
Thuy T.Dang,Nguyen Le Thy Thuong,Pham Thuy Nguyen 한국외국어대학교 인도연구소 2021 남아시아연구 Vol.27 No.3
Infrastructure connectivity plays an important role in Vietnam and India’s trade promotion, and international economic development and cooperation. Vietnam and India have become comprehensive strategic partners since 2016. In its “Act East” Policy, India considered Vietnam as a crucial destination for infrastructure development, trading and investment projects as well as a bridge to connect India with the Southeast Asia region. The article presents direct factors affecting infrastructure connectivity between India and Vietnam, in different aspects including geography and nature; politics and diplomacy; finance and economics; institutional policies and regulations; society and people; and infrastructure. From analyzing these factors, it can be seen that the harmonious diplomatic relations, stable internal politics and the increase in cooperation between Vietnam and India in various fields contribute to ensuring Vietnam - India infrastructure connectivity cooperation. A young, highly skilled workforce and a strong culture of integration also create favorable conditions for infrastructure connectivity between the two countries. However, the remote geographical distance, the limited economic resources, the relative disparity in the level of development of hard and soft infrastructure as well as the limited institutional capacity of each country create certain barriers. Due to the delay in decision-making and planning between the two countries, no direct projects between the two countries have been implemented so far. Currently, it is only possible to place the Vietnam - India infrastructure connectivity projects in the ASEAN - India infrastructure connectivity network, but most of these projects also stop at drafting and planning phase. Therefore, the infrastructure connectivity between Vietnam and India needs to overcome many barriers to achieve certain results.
Thuy T.T. Pham,Geun Young Yeom,June Hee Lee,Yang Soo Kim 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
The influence of the ion bombardment energy controlled by using the d.c. bias voltage from no-bias to --200 V on the chemical and the mechanical properties of Si$_x$N$_y$ deposited by plasma enhanced chemical vapor deposition (PECVD) at substrate temperatures lower than 100 $^\circ$C was investigated for applications to thin film diffusion barriers for organic electronic devices. The deposited film was a silicon-rich Si$_x$N$_y$ thin film having oxygen and hydrogen as major impurities. A change in the d.c. bias voltage up to --200 V during the deposition changed the properties, such as the stress, the hardness, the surface roughness, {\it etc.} in addition to the deposition rate. A lower stress, a harder material, and a smoother surface could be obtained by applying a moderate bias voltage of about --100 V through a change in the bonding states of the oxygen impurity in the film, a densification of the film, and an increased surface mobility of the deposited atoms.
Nguyen Thuy T.,Duong Tien H.,Dinh My T. T.,Truong Thu T. M.,Pham Tram H. H. 한국국제경제학회 2023 International Economic Journal Vol.37 No.2
While there have been numerous papers analyzing the political, economic and social effects of trust, there is little evidence on how social trust has an impact on property rights protection which is fundamental for promoting economic development. This study aims to investigate how trust value is related to property rights protection, focusing on the comparison of the effect on intellectual property rights versus physical property rights. Analyzing the data on property rights protection in 2015 from the Property Right Alliance organization and trust value from the World Value Survey from 1999 to 2014, we find that social trust has a direct effect only on intellectual property rights protection but less consistent on physical property rights protection. However, trust value has indirect effect on both forms of property rights protection via formal institutions. Our study, thus, adds to the literature by clarifying the context through which trust value affects cheating behaviors.
EXPLICIT ITERATIVE METHODS FOR MAXIMAL MONOTONE OPERATORS IN HILBERT SPACES
Nguyen T. T. Thuy,Pham T. T. Hoai,Nguyen T. T. Hoa 경남대학교 수학교육과 2020 Nonlinear Functional Analysis and Applications Vol.25 No.4
In this paper, we introduce new explicit iterative methods for solving a variationalinequality problem over the set of zeros for a maximal monotone operator in Hilbertspaces. By using two resolvents of the monotone operator at each iterate, we prove strongconvergence of the methods under a general condition on resolvent parameter. As specialcases, new contraction and generalized proximal point methods are obtained. An exampleis given for illustration and comparison.
Nguyen, Huyen T.T.,Pham, Huy K.,Nguyen, Vu A.,Mai, Tung T.,Le, Hang T.T.,Hoang, Thuy T.B. The Korean Electrochemical Society 2022 Journal of electrochemical science and technology Vol.13 No.2
Heavy metals recovery from Printed Circuit Boards industrial wastewater is crucial because of its cost effectiveness and environmental friendliness. In this study, a copper recovery route combining the sequential processes of acid leaching and LIX 984N extracting with an electrowinning technique from Printed Circuit Boards production's sludge was performed. The used residual sludge was originated from Hanoi Urban Environment One Member Limited Company (URENCO). The extracted solution from the printed circuit boards waste sludge containing a high copper concentration of 19.2 g/L and a small amount of iron (0.575 ppm) was used as electrolyte for the subsequent electrolysis process. By using a simulation model for multi-step current electrolysis, the reasonable current densities for an electrolysis time interval of 30 minutes were determined, to optimize the specific consumption energy for the copper recovery. The mathematical simulation model was built to calculate the important parameters of this process.
Yun-Sook Lim,Men T.N. Nguyen,Thuy X. Pham,Trang T.X. Huynh,Eun-Mee Park,Dong Hwa Choi,Sang Min Kang,Dongseob Tark,Soon B. Hwang 한국분자세포생물학회 2022 Molecules and cells Vol.45 No.3
Hepatitis C virus (HCV) is a major cause of chronic liver disease and is highly dependent on cellular proteins for viral propagation. Using protein microarray analysis, we identified 90 cellular proteins as HCV nonstructural 5A (NS5A) interacting partners, and selected telomere length regulation protein (TEN1) for further study. TEN1 forms a heterotrimeric complex with CTC and STN1, which is essential for telomere protection and maintenance. Telomere length decreases in patients with active HCV, chronic liver disease, and hepatocellular carcinoma. However, the molecular mechanism of telomere length shortening in HCV-associated disease is largely unknown. In the present study, protein interactions between NS5A and TEN1 were confirmed by immunoprecipitation assays. Silencing of TEN1 reduced both viral RNA and protein expression levels of HCV, while ectopic expression of the siRNA-resistant TEN1 recovered the viral protein level, suggesting that TEN1 was specifically required for HCV propagation. Importantly, we found that TEN1 is re-localized from the nucleus to the cytoplasm in HCV-infected cells. These data suggest that HCV exploits TEN1 to promote viral propagation and that telomere protection is compromised in HCV-infected cells. Overall, our findings provide mechanistic insight into the telomere shortening in HCV-infected cells.
염근영,김양수,이준희,Thuy. T. T. Pham,임종태 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
SiO2-like thin films were deposited at low temperature (<50 ℃) by using atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) with a pin-to-plate type dielectric barrier discharge (DBD) and a gas mixture containing hexamethyldisilazane (HMDS)/Ar/O2. The film's characteristics were investigated as a function of the HMDS flow rate. Increasing the HMDS flow rate from 100 sccm to 500 sccm increased the deposition rate almost linearly from 46.4 nm/min to 141.1 nm/min. However, increasing the HMDS flow rate increased impurities such as C and H and the surface roughness of the deposited lm. Fourier transform infrared measurement showed an increase of -OH and -(CH3)x (x = 1, 2 or 3) in the film with increasing HMDS flow rate. The increased surface roughness and impurities in the deposited lm are believed to be related to incompletely dissociated HMDS at higher HMDS flow rates. By optimizing the oxygen flow rate and the HMDS flow rate, we believe that a SiO2 thin film with low impurity and low surface roughnesses can be obtained. In this experiment, with the HMDS flow rate in the range of 100 ∽ 200 sccm, SiO2-like thin films having low surface roughness and low impurities (<3.7 % C) could be obtained.