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Nguyen, Thanh Huong,Nguyen, Trung Kien,Kim, Bao Giang,Hoang, Van Minh,Phan, Thi Hai,Doan, Thu Huyen,Luong, Ngoc Khue,Nguyen, Thuy Linh,Nguyen, Tuan Lam,Pham, Thi Quynh Nga Asian Pacific Journal of Cancer Prevention 2016 Asian Pacific journal of cancer prevention Vol.17 No.no.sup1
Studies have shown that smoking is a learnt behavior, often initiated during adolescence. This paper aims to describe tobacco-related knowledge, attitude and associations among school adolescents aged 13-15 with exposure to anti-smoking information. Using data from the Global Youth Tobacco Survey (GYTS) in Viet Nam, 2014, knowledge was measured through 4 questions about tobacco use, and attitude was assessed through 3 questions on personal, social and environmental aspects. Students giving most anti-tobacco responses to all questions were considered as having correct knowledge or appropriate attitude or both. Access to anti-smoking information was determined by exposure to any media messages on tobacco control during the past 30 days and teaching in school about the danger of tobacco use during the past 12 months. A substantial percentage of students thought that being near others who smoke might be harmful to them and smoking is harmful to health (89.4% and 89.6% respectively). However, only 46.4% reported that it is definitely difficult to quit smoking and 66.9% thought that smoking for only 1 or 2 years, once stopped, is harmful to health. Slightly more than half of the respondents reported appropriate attitude that young smokers have fewer friends than others and smoking makes them less attractive and less comfortable at social events. Noticing anti-smoking messages in the media together with having lessons in school about the dangers of tobacco substantially increased the likelihood of having correct knowledge, appropriate attitude and both. Despite relatively high awareness about smoking harms, effective educational communication is still highly needed to improve the level of comprehensive knowledge and an appropriate attitude regarding tobacco use.
Induction of methionine adenosyltransferase 2A in tamoxifen-resistant breast cancer cells
( Nguyen Thi Thuy Phuong ),( Sang Kyum Kim ),( Ji Hye Im ),( Jin Won Yang ),( Min Chang Choi ),( Sung Chul Lim ),( Kwang Yeol Lee ),( Young-mi Kim ),( Jeong Hoon Yoon ),( Keon Wook Kang ) 전남대학교 약품개발연구소 2016 약품개발연구지 Vol.25 No.-
We previously showed that-S-adenosylmethionine-mediated hypermethylation of the PTEN promoter was important for the growth of tamoxifen-resistant MCF-7 (TAMR-MCF-7) cancer cells. Here, we found that the basal expression level of methionine adenosyltransferase 2A (MAT2A), a critical enzyme for the biosynthesis of S-adenosylmethionine, was up-regulated in TAMR-MCF-7 cells compared with control MCF-7 cells. Moreover, the basal expression level of MAT2A in T47D cells, a TAM-resistant estrogen receptor-positive cell line was higher compared to MCF-7 cells. Immunohistochemistry confirmed that MAT2A expression in TAM-resistant human breast cancer tissues was higher than that in TAM-responsive cases. The promoter region of human MAT2A contains binding sites for nuclear factor-кB, activator protein-1 (AP-1), and NF-E2-related factor 2 (Nrf2), and the activities of these three transcription factors were enhanced in TAMR-MCF-7 cells. Both the protein expression and transcriptional activity of MAT2A in TAMR-MCF-7 cells were potently suppressed by NF-кB inhibition but not by c-Jun/AP-1 or Nrf2 Knock-down. Interestingly, the expression levels of microRNA (miR)-146a and-146b were diminished in TAMR-MCF-7 cells, and miR-146b transduction decreased Nf-кB-mediated MAT2A expression. miR-146b restored PTEN expression via the suppression of PTEN promoter methylation In TAMR-MCF-7 cells. Additionally, miR-146b overexpression inhibited cell proliferation and reversed chemoresistance to-hydroxyramoxifen in TAMR-MCF-7 cells.
Perception of Organizational Support to Lecturers' Research Motivation: The Case of Vietnam
NGUYEN, Thanh Do,BUI, Thi Hong Viet,NGUYEN, Thi Le Thuy,TRAN, Manh Dung,TRAN, Thi Kim Nhung Korea Distribution Science Association 2021 The Journal of Asian Finance, Economics and Busine Vol.8 No.2
The aim of this study is to test the direct relationship and the indirect relationship of the perceived organizational support to lecturers' research motivation through "expectation" factor (belief in ability). The subject of the study is lecturers who are teaching and researching in the fields of economic, management and business administration at universities in Vietnam. The questionnaires were directly sent to lecturers at scientific conferences, sent out via e-mail and Facebook, the questionnaires were designed on google docs and directly sent to the lecturers. The detailed sample includes 475 respondents. The results of a quantitative analysis with a research sample of 475 lecturers in economics universities in Vietnam show that it is impossible to separate between lecturers' research ability and motivation. Lecturers with increased expectation (in terms of capability) also have increased research motivation, and vice versa. At the same time, the research also affirms the role of perceived organizational support, which not only has a direct positive impact on research motivation, but also increases expectation, thus, indirectly influence research motivation. This suggests that the solution for managers who want to improve research motivation by having measures to increase the expectation for the lecturers through various forms of organizational support.
Design and growth of InAsP metamorphic buffers for InGaAs thermophotovoltaic cells
Nguyen Thuy Thi,Kim Yeongho,Park Suho,이상준,Jo Hyun Jun,Kim Jong Su,Nguyen Liem Quang,Kim Eui-Tae 한국물리학회 2021 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.78 No.11
The structural and optical properties of InAsxP1-x metamorphic buffers grown by metal–organic chemical vapor deposition on InP (100) substrates have been investigated. High-resolution X-ray reciprocal space mapping around the (115) InP lattice point reveals that the strain relaxations of the InAsxP1-x with x = 0.5, 0.55, and 0.7 are 98%, 92%, and 96%, while the lateral correlation lengths are 17, 62, and 28 nm, respectively. The optical bandgap energy of the InAsP derived from photoreflectance (PR) measurements decreases from 0.819 to 0.621 eV at 300 K when increasing As composition from x = 0.5 to 0.7. The bowing parameter for the optical bandgap of the InAsP is increased with increasing As composition, which is attributable to the increased spontaneous CuPt-type ordering in InAsP. It is found from the excitation power-dependent PR measurement that the InAsxP1-x layers have different degrees of the bandgap redshift due to the reduced thermal conductivity caused by crystal imperfections generated during the strain relaxation process.
Kim, Sangho,Dao, Vinh Ai,Trinh, Thanh Thuy,Duy Phong, Pham,Park, Jinjoo,Thi Hanh Thu, Vu,Thuy Ngoc Thuy, Nguyen,Thi Thanh Giang, Ngo,Lee, Sunhwa,Yi, Junsin Institute of Physics 2019 Semiconductor science and technology Vol.34 No.6
<P>In this study, a recorded high open-circuit voltage (V<SUB>oc</SUB>) of 1.61 V and fill factor (FF) of 76.65% of a-Si:H p-i-n/heterojunction with intrinsic thin layer (HIT)-type multi-junction solar cells were achieved using grain size enlargement within the p-type <I>μ</I>c-Si:H layer in a p-type <I>μ</I>c-Si:H/n-type a-Si:H tunneling recombination junction (TRJ) layer. The p-type <I>μ</I>c-Si:H layer’s conductivity increased from 1.74?×?10<SUP>−4</SUP> to 0.1 S cm<SUP>−1</SUP> as the film’s crystallinity increased from 41.5% to 67.5%. The a-Si:H p-i-n/HIT-type multi-junction solar cells also benefited from the tuning up crystalline p-type <I>μ</I>c-Si:H layer, showing the increase of V<SUB>oc</SUB> and FF from 1.5 V and 49.88% to 1.61 V and 76.65%, respectively; while the short-circuit current density (9.38?±?0.2 mA cm<SUP>−2</SUP>) did not change significantly. These are the highest V<SUB>oc</SUB> and FF values achieved in a-Si:H p-i-n/HIT-type multi-junction solar cells, recently. From dark current-voltage analysis, it was deduced that the enhanced crystalline films could assist in suppressing carrier interference in the TRJ layer, thus reduces electric field distortion and mitigates recombination in the device. In summary, an enhanced crystalline p-type <I>μ</I>c-Si:H layer could be a viable option for ensuring an excellent TRJ layer, thus achieved high efficiency of inorganic/c-Si tandem solar cells. Using optimal condition with crystallinity of 74.1%, the photovoltaic parameters of the device yield V<SUB>oc</SUB>, J<SUB>sc</SUB> and FF of 1.51 V, 13.01 mA cm<SUP>−2</SUP> and 71.45%, which in turned giving an efficiency of 14.04% for a-SiGe:H p-i-n/HIT-type tandem solar cell.</P>