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Taweewat Krajangsang,Shunsuke Kasashima,Aswin Hongsingthong,Porponth Sichanugrist,Makoto Konagai 한국물리학회 2012 Current Applied Physics Vol.12 No.2
Preparation of p-type hydrogenated microcrystalline silicon oxide thin films (p-mc-Si1-xOx:H) by 13.56 MHz RF-PECVD method for use as a p-layer of hetero-junction mc-Si:H solar cells is presented. We investigated effects of wide-gap p-mc-Si1-xOx:H layer on the performance of hetero-junction mc-Si:H solar cells under various light intensity. We observed that a wide-gap p-mc-Si1-xOx:H was effective in improving the open-circuit voltage (Voc) of the solar cells. We also confirmed that the Voc logarithmically increased with increasing light intensity, and the enhancement of Voc became larger with increasing band gap of p-layer. These results indicate that wide-gap p-mc-Si1-xOx:H is a promising material for use as window layer in hetero-junction mc-Si:H solar cells.
Taweewat Krajangsang,Ihsanul Afdi Yunaz,Shinsuke Miyajima,Makoto Konagai 한국물리학회 2010 Current Applied Physics Vol.10 No.3
A theoretical analysis using Analysis of Microelectronic and Photonic Structures (AMPS-1D) has been performed to investigate how the widegap p-lc-Si1-xOx:H influences the hetero-junction μc-Si:H solar cells. We observed that the open-circuit voltage (Voc) depends on the bandgap of p-layer. Using wide bandgap p-layer can reduce recombination at p-layer and p/i interface. Moreover, we also have studied the effect of light intensity on the performance of hetero-junction μc-Si:H solar cells. From simulation result, it was confirmed that the Voc logarithmically increases with increasing the light intensity. Besides, we also observed that the p-layer bandgap strongly influences the light-intensity dependence of hetero-junction μc-Si:H solar cells. The enhancement of Voc (DVoc) with increasing light intensity improves as the bandgap of p-layer is increased. Therefore, widegap p-μc-Si1-xOx:H is promising for use as window layer in hetero-junction μc-Si:H solar cells.