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Talantsev, A,Lu, Y,Fache, T,Lavanant, M,Hamadeh, A,Aristov, A,Koplak, O,Morgunov, R,Mangin, S IOP 2018 Journal of Physics, Condensed Matter Vol.30 No.13
<P>Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (<I>P</I> state) to a state where magnetizations of the two layers are aligned antiparallel (<I>AP</I> state). The second one concerns transitions between the two possible antiparallel alignments (<I>AP</I>+ to <I>AP</I>−). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation—propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.</P>
Critical current anisotropy for second generation HTS wires
E.F. Talantsev,N.M. Strickland,P. Hoefakker,J.A. Xia,N.J. Long 한국물리학회 2008 Current Applied Physics Vol.8 No.3,4
Angular anisotropies of critical currents with respect to an applied magnetic eld,Ic(B,h), were experimentally studied for two typesof second-generation high-temperature superconductor (HTS) tapes synthesized by metal-organic and E-beam deposition. We alsoexamine the angular dependence of the power-law exponent in the electric eld-current density relation. The angular dependence of theseparameters provides an insight into the nature of the ux-pinning mechanisms in these tapes.
Free and forced Barkhausen noises in magnetic thin film based cross-junctions
Elzwawy, Amir,Talantsev, Artem,Kim, CheolGi Elsevier 2018 Journal of magnetism and magnetic materials Vol.458 No.-
<P><B>Abstract</B></P> <P>Barkhausen noise, driven by thermal fluctuations in stationary magnetic field, and Barkhausen jumps, driven by sweeping magnetic field, are demonstrated to be effects of different orders of magnitude. The critical magnetic field for domain walls depinning, followed by avalanched and irreversible magnetization jumps, is determined. Magnetoresistive response of NiFe/M/NiFe (M = Au, Ta, Ag) trilayers to stationary and sweeping magnetic field is studied by means of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) measurements. Thermal fluctuations result in local and reversible changes of magnetization of the layers in thin film magnetic junctions, while the sweeping magnetic field results in reversible and irreversible avalanched domain motion, dependently on the ratio between the values of sweeping magnetic field and domain wall depinning field. The correlation between AMR and PHE responses to Barkhausen jumps is studied. The value of this correlation is found to be dependent on the <I>α</I> angle between the directions of magnetic field and current path.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Planar Hall effect (PHE) is studied together with anisotropic MR (AMR). </LI> <LI> The jumps on PHE and AMR vs magnetic field curves are asynchronous. </LI> <LI> The correlation between PHE and AMR jumps is governed by magnetic field direction. </LI> <LI> At low fields the combination of AMR and GMR effects results in linear response. </LI> <LI> The sensor’s noise is reduced, if the Au instead of Ag is used as an interlayer material. </LI> </UL> </P>