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Takeshi Umehara,Shohei Iinuma,Akira Yamada 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
This study investigated the band profile design of Cu(In,Ga)Se2 (CIGS)solar cells by considering the rear surface recombination. We comparedthe structures assuming the back surface field (BSF), passivation andgraded band profile by using device simulator. As a result, it was foundthat the band structure of a combination of a flat-band and a singlegradedprofile is the suitable structure for CIGS solar cells with theabsorber thickness of around 1.0 μm. In addition, the back passivationtechnique is unnecessary in the case of CIGS solar cells with a bandprofiling technique. We proposed that the band structure of acombination of a flat-band and a single-graded profile is the mostpractical and effective way for CIGS solar cells.