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Park, S.M.,Ebihara, K.,Ikegami, T.,Lee, B.J.,Lim, K.B.,Shin, P.K. Elsevier 2007 Current Applied Physics Vol.7 No.5
In this work, indium-tin-oxide (ITO) electrode in organic light emitting device (OLED) was modified by using an O<SUB>2</SUB> plasma treatment and plasma polymerized thiophene buffer layers were inserted between ITO (anode) and organic layer in order to improve the hole injection efficiency. Furthermore, electron injection to cathode (Al) in the test OLED seemed to be improved due to introduction of quantum well in the cathode. The plasma-polymerized thiophene buffer layer on the O<SUB>2</SUB> plasma-treated transparent ITO electrode seemed to result in formation of a stable interface and consequently, reduction the hole mobility, which in turn caused enhanced recombination of hole and electron in the emitting layer. Compared with the test device without buffer layer, the turn-on voltage of the test device with the buffer layer was lowered by 1.0V.
H. Fujiwara,Y. Nakatani,H. Aratani,Y. Kanai-Nakata,K. Yamagami,S. Hamamoto,T. Kiss,A. Sekiyama,A. Tanaka,T. Ebihara,Y. Saitoh 한국물리학회 2023 새물리 Vol.73 No.12
We have performed the soft x-ray absorption spectroscopy (XAS) on the heavy fermion superconductor CeNi₂Ge₂ to examine the local 4f electronic structures. The XAS spectra are qualitatively explained by the ionic calculation, indicating the localized character of the 4f states, while the sizable cf-hybridization effects are also observed in the XAS spectra and those magnetic circular dichroism. In addition, the temperature dependence of linear dichroism (LD) in the XAS spectra indicates that the ground state symmetry is Γ<SUB>7</SUB>, and the excited states with Γ<SUB>6</SUB> symmetry is above 390 K.