http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Mee-Yi Ryu,E. A. Moore,R. L. Hengehold,T. D. Steiner,Y. K. Yeo 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Electrical activation studies of Si-implanted AlxG1ကxN grown on sapphire substrate have been made as a function of ion dose, anneal temperature, and anneal time. The samples were annealed from 1200 to 1350 C with a 500 A thick AlN cap in a nitrogen environment. The optimum anneal temperature for Al0:25Ga0:75N samples implanted with a dose of 1 1015 cmက2 is around 1350 C, exhibiting nearly 87 % electrical activation eciency. Both the electrical activation eciency and Hall mobility of Si-implanted Al0:18Ga0:82N annealed at 1200 C from 5 to 25 min increase continuously with anneal time, but at a much slower rate as anneal time increases. The activation eciencies of 94 and 89 % were obtained for doses of 1 1015 and 5 1014 cmက2, respectively, after annealing at 1200 C for 25 min, which are the highest activation eciency reported for a given dose, to the best of our knowledge.