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Classification of three-generation models on magnetized orbifolds
Abe, T.h.,Fujimoto, Y.,Kobayashi, T.,Miura, T.,Nishiwaki, K.,Sakamoto, M.,Tatsuta, Y. North Holland 2015 Nuclear Physics, Section B Vol.894 No.-
We classify the combinations of parameters which lead three generations of quarks and leptons in the framework of magnetized twisted orbifolds on T<SUP>2</SUP>/Z<SUB>2</SUB>, T<SUP>2</SUP>/Z<SUB>3</SUB>, T<SUP>2</SUP>/Z<SUB>4</SUB> and T<SUP>2</SUP>/Z<SUB>6</SUB> with allowing nonzero discretized Wilson line phases and Scherk-Schwarz phases. We also analyze two actual examples with nonzero phases leading to one-pair Higgs and five-pair Higgses and discuss the difference from the results without nonzero phases studied previously. (Note: this article is registered under preprint number: arXiv:1501.02787 [hep-ph].)
핸드볼 선수의 체력에 관한 연구 : 전일본선수와 일체대선수의 형태, 체력의 비교
申吉洙,竹內正雄,阿部德之助,北川勇喜,松井幸嗣,森川壽人,西山逸成 圓光大學校 附設 體力科學硏究所 1989 體力科學硏究 Vol.11 No.-
The purpose of the study was to find the structure andfunctionpattern of Japan handball players. The result of these tests are shown on the followings. 1. Between the body height and body weight, Japan player is significantly higer than that of physical education's player in Japan. From the statistically, Japan Physical education player is lower than that of player in Japan. 2. Between flexion strength of upper-arm and fore-arm circumference, Japan physical education player is lower than that of player in Japan. 3. Among the back strength, ball-speed, maximum oxygen uptake, Japan physical education player is lower than that of players in Japan. 4. Between the 12minute-run and gripping strength, Japan player is the same that of physical education colleage's player in Japan.
T. Muranaka,A. Nisii,T. Uehara,T. Sakano,Y. Nabetani,T. Akitsu,T. Kato and T. Matsumoto,T. Matsumoto,S. Hagihara,O. Abe,S. Hiraki,Y. Fujikawa 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Ga-doped zinc-oxide (GZO) films grown under various Ga/Zn supply ratios were carefully characterized by using Hall measurements and optical transmittance measurements to investigate the electrical and the optical properties of the GZO films on glass, polyethylene terephthalate (PET), and polycarbonate (PC) substrates. The resistivity of the GZO films grown at 290 ℃ on glass substrates ranged from 4 × 10-2 cm to 3 × 10-4 cm for Ga/Zn supply ratios from 0 % to 0.5 %. The growth of the GZO films at a low temperature of 90 ℃ was also performed on glass, PET, and PC substrates. When the Ga/Zn supply ratios were 0.05 - 0.1 %, the 90 ℃-grown GZO films on glass substrates showed resistivities similar to those of 290 ℃-grown GZO films. The 90 ℃-grown GZO films on PET and PC substrates showed resistivities of 1 × 10-3 cm and 4 × 10-4 cm, respectively. The Hall carrier density was 8 × 1020 cm-3, which was almost the same value as that of the 90 ℃-grown GZO films on glass substrates. The GZO films on PET and PC substrates also showed visible transparency as good as that of the GZO films on glass substrates, and the average transmittance in the visible region was higher than 85 %.
T. Muranaka,T. Uehara,T. Sakano,Y. Nabetani,T. Akitsu,T. Kato,T. Matsumoto,S. Hagihara,O. Abe,S. Hiraki,Y. Fujikawa 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Ga-doped zinc-oxide (GZO) films grown at various Ga/Zn supply ratios were prepared on glass substrates by using plasma-assisted molecular beam deposition. The films were carefully characterized by using Hall, X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. At low Ga/Zn supply ratios, the carrier density systematically increased with increasing Ga/Zn supply ratio. However, a saturation of the carrier density near 4 − 6 × 1020 cm−3 was observed when the Ga/Zn supply ratio was in the range from 5 × 10−5 % to 0.5 %. From TEM observations, uniform crystal grains were observed to grow with low-angle tilt grain boundaries in GZO films with low doping. On the other hand, high-angle tilt grain boundaries were observed in the highly-doped GZO films. A detailed selected area electron diffraction (SAED) analysis revealed that such non-uniformity in the highly-doped GZO films appears during the initial growth stage.
Evidence of electron neutrino appearance in a muon neutrino beam
Abe, K.,Abgrall, N.,Aihara, H.,Akiri, T.,Albert, J. B.,Andreopoulos, C.,Aoki, S.,Ariga, A.,Ariga, T.,Assylbekov, S.,Autiero, D.,Barbi, M.,Barker, G. J.,Barr, G.,Bass, M.,Batkiewicz, M.,Bay, F.,Bentham American Physical Society 2013 PHYSICAL REVIEW D - Vol.88 No.3
INVESTIGATION ON FERROMAGNETIC Mn₁-XCOXPt₃ ORDERED ALLOYS
T.Kaneko,H. Fujimori,H.Yoshida,K.Watanabe,S.Abe,M.Matsumoto,T.Yoshida,T.Kanomata 한국자기학회 1995 韓國磁氣學會誌 Vol.5 No.5
The magnetization of Mn_(1-X)Co_XPt₃ ordered alloys was measured at various temperatures and the pressure effect on Tc for X=0.25, 0.5 and 0.6 was examined. The X dependence of Tc determined by Arott plot has a minimum near X=0.6. The field-cooling effect measurement for X=0.5 shows a reentrant spin glass behavior. It is found that there is a concentration showing no pressure dependence of Tc between X=0.25 and 0.5. These magnetic properties are discussed with a rigid band model.
T. Abe,N. Yamane,T. Nishiguchi,H. Kozeni,T. Yoshida,M. Adachi,H. Kasada,K. Ando 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
A practical blue waveguide Stark-eect optical modulator using ZnSe/ZnMgSSe asymmetric cou- pled quantum wells (ACQWs) has been demonstrated. The device structure is a p-i-n diode with a 50 periods ZnSe(6 ML)/ZnMgSSe(2 ML)/ZnSe(12 ML) ACQW active region grown on an n-GaAs substrate by using molecular beam epitaxy (MBE). The ridge-shape devices are fabricated by wet- etching with a fairly-short eective modulation waveguide length of 13 m and are located under a top stripe-electrode. The waveguide modulator exhibits a high modulation depth of 95 % (contrast ratio: 13 dB) under reverse bias condition of 68 V at room temperature at an operating wavelength of 458 nm. A practical blue waveguide Stark-eect optical modulator using ZnSe/ZnMgSSe asymmetric cou- pled quantum wells (ACQWs) has been demonstrated. The device structure is a p-i-n diode with a 50 periods ZnSe(6 ML)/ZnMgSSe(2 ML)/ZnSe(12 ML) ACQW active region grown on an n-GaAs substrate by using molecular beam epitaxy (MBE). The ridge-shape devices are fabricated by wet- etching with a fairly-short eective modulation waveguide length of 13 m and are located under a top stripe-electrode. The waveguide modulator exhibits a high modulation depth of 95 % (contrast ratio: 13 dB) under reverse bias condition of 68 V at room temperature at an operating wavelength of 458 nm.