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- 저자 : Szu-Ying Yu (검색결과 3 건)
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Nonlinear vibration of hybrid composite plates on elastic foundations
Wei-Ren Chen,Chun-Sheng Chen,Szu-Ying Yu 국제구조공학회 2011 Structural Engineering and Mechanics, An Int'l Jou Vol.37 No.4
In this paper, nonlinear partial differential equations of motion for a hybrid composite plate subjected to initial stresses on elastic foundations are established to investigate its nonlinear vibration behavior. Pasternak foundation and Winkler foundations are used to represent the plate-foundation interaction. The initial stress is taken to be a combination of pure bending stress plus an extensional stress in the example problems. The governing equations of motion are reduced to the time-dependent ordinary differential equations by the Galerkin's method. Then, the Runge-Kutta method is used to evaluate the nonlinear vibration frequency and frequency ratio of hybrid composite plates. The nonlinear vibration behavior is affected by foundation stiffness, initial stress, vibration amplitude and the thickness ratio of layer. The effects of various parameters on the nonlinear vibration of hybrid laminated plate are investigated and discussed.
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Nonlinear vibration of hybrid composite plates on elastic foundations
Chen, Wei-Ren,Chen, Chun-Sheng,Yu, Szu-Ying Techno-Press 2011 Structural Engineering and Mechanics, An Int'l Jou Vol.37 No.4
In this paper, nonlinear partial differential equations of motion for a hybrid composite plate subjected to initial stresses on elastic foundations are established to investigate its nonlinear vibration behavior. Pasternak foundation and Winkler foundations are used to represent the plate-foundation interaction. The initial stress is taken to be a combination of pure bending stress plus an extensional stress in the example problems. The governing equations of motion are reduced to the time-dependent ordinary differential equations by the Galerkin's method. Then, the Runge-Kutta method is used to evaluate the nonlinear vibration frequency and frequency ratio of hybrid composite plates. The nonlinear vibration behavior is affected by foundation stiffness, initial stress, vibration amplitude and the thickness ratio of layer. The effects of various parameters on the nonlinear vibration of hybrid laminated plate are investigated and discussed.
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Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
Ko, Hyunhyub,Takei, Kuniharu,Kapadia, Rehan,Chuang, Steven,Fang, Hui,Leu, Paul W.,Ganapathi, Kartik,Plis, Elena,Kim, Ha Sul,Chen, Szu-Ying,Madsen, Morten,Ford, Alexandra C.,Chueh, Yu-Lun,Krishna, Sanj Nature Publishing Group, a division of Macmillan P 2010 Nature Vol.468 No.7321
Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of III??V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored??but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO<SUB>2</SUB> substrates. As a parallel with silicon-on-insulator (SOI) technology, we use ??XOI?? to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO<SUB>x</SUB> layer (~1?nm thick). The fabricated field-effect transistors exhibit a peak transconductance of ~1.6?mS?쨉m<SUP>??1</SUP> at a drain??source voltage of 0.5?V, with an on/off current ratio of greater than 10,000.
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