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최현광,황숙현,전민현,Syoji Yamada 한국전기전자재료학회 2011 Transactions on Electrical and Electronic Material Vol.12 No.4
The growth and characterization of In_(0.5)Ga_(0.5)As/In_(0.5)Al_(0.5)As narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface In_(0.5)Ga_(0.5)As channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm In_(0.5)Al_(0.5)As cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.