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[Focus] 중국 군사력 평가에 대한 다섯가지 가정의 오류
M.Swaine(M.Swaine) 한국전략문제연구소 1997 전략연구 Vol.4 No.2
RAND 산하 아태정책연구소의 M. Swaine 소장은 최근 WP지(5. 18 자 ) 기고문을 통해 중국을 바라보는 세계의 시각이 혼란스러운 경향을 보이는 가운데 중국의 군현대화 추진이 아시아 평화에 중대 위협이라는 내용의 5가지 잘못된 가정이 제기되고 있다고 지적하면서 이런한 견해는 사태를 과장 평가한것이며 미 국익에도 부합되지 않는다고 주잗
Chemical surface passivation of silicon nanowires grown by APCVD
Swain, B.S.,Swain, B.P.,Hwang, N.M. Elsevier 2010 CURRENT APPLIED PHYSICS Vol.10 No.3
Silicon nanowires (SiNWs) are attractive candidate for solar cells and surface passivation has been recognized an important fabrication steps solar cells. The SiNWs were grown on p-type Si (100) substrate by atmospheric pressure chemical vapour deposition. Field emission scanning electron microscopy, Raman spectroscopy and Fourier transform infrared spectroscopy were used to study the atomic bonding and microstructural aspect of silicon nanowires. Hydrogen and chlorine passivation were carried out by dilute HF and HCl solutions. The transient photoconductance decay and effective lifetime of SiNWs/c-Si were study by microwave photoconductance decay. The effective lifetime of SiNWs/p-Si were observed in between 0.5 and 0.8μs.
Structural and optical properties of H2 diluted c-Si/a-SiO x core-shell silicon nanowire
Swain, B. S.,Swain, B. P.,Mahmood, K.,Yang, S. M.,Hwang, N. M. Springer Science + Business Media 2015 APPLIED PHYSICS A MATERIALS SCIENCE AND PROCESSING Vol.118 No.1
<P>We observed photoluminescence quenching in crystalline (c) Si/amorphous (a) SiO (x) core-shell silicon nanowires (Si-NWs). We observed that the photoluminescence (PL) intensity strongly depends on the stoichiometry of outer a-SiO (x) matrix, which was characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The PL showed a broad-range emission from 1.6 to 2.4 eV with the peak centered at 2.27 eV, which quenched as the oxygen content decreased from 60.5 to 54.6 at.%. Both transverse optic and longitudinal optic signatures of Si-O-Si were shifted to lower wavenumbers, which indicate the modification of chemical networks in core-shell Si-NWs. The minority carrier life time (tau) increased from 3.4 to 7.5 A mu s as the diameter of core Si increased from 22 to 78 nm, indicating the decrease of trap densities and alternation trap states. The reason for PL quenching is mostly attributed to the structural and stoichiometry changes in outer a-SiO (x) of c-Si/a-SiO (x) -NW.</P>
Swain, B.S.,Lee, S.S.,Lee, S.H.,Swain, B.P.,Hwang, N.M. North Holland ; Elsevier Science Ltd 2010 Chemical physics letters Vol.494 No.4
We report the effect of H<SUB>2</SUB> ambient annealing on the microstructure and vibrational properties of silicon nanowires (SiNWs) grown by atmospheric pressure chemical vapor depositions. The SiNWs were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Field-Emission Scanning Electron Microscopy (FESEM) and High-Resolution Transmission Electron Microscopy (HRTEM). The HRTEM study revealed that the thickness of oxide sheath surrounded by core silicon decreased with increasing H<SUB>2</SUB> ambient annealing and consequently the vibrational spectra were changed. In FTIR spectra, the transverse optic and longitudinal optic peak positions of Si-O symmetry and asymmetry showed a blue shift of the outer oxide of SiNWs. The Si-O-Si peak position remained unchanged at 1080cm<SUP>-1</SUP> while the integrated absorption of Si-O-Si vibration band decreased with increasing H<SUB>2</SUB> flow rate.
Swain, B.P.,Swain, B.S.,Hwang, N.M. Elsevier Sequoia 2014 JOURNAL OF ALLOYS AND COMPOUNDS Vol.588 No.-
Silicon and carbon based alloys were deposited by hot wire chemical vapor deposition (HWCVD). The microstructure and chemical bonding of these films were characterized by field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The electron microscopy revealed various microstructures were observed for a-C:H, a-SiC:H, a-SiN:H, a-CN:H and a-SiCN:H films. The microstructure of SiN:H films showed agglomerate spherical grains while a-C:H films showed more fractal surface with branched microstructure. However, a-SiC:H, a-CN:H and a-SiCN:H indicated uniform but intermediate surface fractal microstructure. A series of a-SiCN:H films were deposited with variation of NH<SUB>3</SUB> flow rate. The nitrogen incorporation in a-SiCN:H films alter the carbon network from sp<SUP>2</SUP> to sp<SUP>3</SUP> bonding The detail chemical bonding of amorphous films was analyzed by curve fitting method.
Chemical surface passivation of silicon nanowires grown by APCVD
Bhabani S. Swain,황농문,Bibhu P. Swain 한국물리학회 2010 Current Applied Physics Vol.10 No.3
Silicon nanowires (SiNWs) are attractive candidate for solar cells and surface passivation has been recognized an important fabrication steps solar cells. The SiNWs were grown on p-type Si (1 0 0) substrate by atmospheric pressure chemical vapour deposition. Field emission scanning electron microscopy, Raman spectroscopy and Fourier transform infrared spectroscopy were used to study the atomic bonding and microstructural aspect of silicon nanowires. Hydrogen and chlorine passivation were carried out by dilute HF and HCl solutions. The transient photoconductance decay and effective lifetime of SiNWs/c-Si were study by microwave photoconductance decay. The effective lifetime of SiNWs/p-Si were observed in between 0.5 and 0.8 μs.
Synthesis and Characterization of Graphene Based Unsaturated Polyester Resin Composites
Swain, Sarojini The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.2
Graphene-based polymer nanocomposites are very promising candidates for new high-performance materials that offer improved mechanical, barrier, thermal and electrical properties. Herein, an approach is presented to improve the mechanical, thermal and electrical properties of unsaturated polyester resin (UPR) by using graphene nano sheets (GNS). The extent of dispersion of GNS into the polymer matrix was also observed by using the scanning electron microscopy (SEM) which indicated homogeneous dispersion of GNS through the UPR matrix and strong interfacial adhesion between the GNS and UPR matrix were achieved in the UPR composite, which enhanced the mechanical properties. The tensile strength of the nanocomposites improved at a tune of 52% at a GNS concentration of 0.05%. Again the flexural strength also increased around 92% at a GNS concentration of 0.05%. Similarly the thermal properties and the electrical properties for the nanocomposites were also improved as evidenced from the differential scanning caloriemetry (DSC) and dielectric strength measurement.