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입출력 가상화 기반 가상 데스크탑 서비스를 이용한 물리적 네트워크 망분리 시스템 설계 및 구현
김선욱(Sunwook Kim),김성운(Seongwoon Kim),김학영(Hakyoung Kim),정성권(Seongkwon Chung),이숙영(Sookyoung Lee) 한국정보과학회 2015 정보과학회 컴퓨팅의 실제 논문지 Vol.21 No.7
입출력 가상화는 하나의 물리적 입출력 장치를 하나 이상의 가상 데스크탑들이 공유해서 사용할 수 있도록 하는 기술로서 일반적으로 가상화 소프트웨어가 소프트웨어적으로 에뮬레이션하여 제공하는 가상 I/O 장치들을 가상 데스크탑에서 사용한다. 소프트웨어 에뮬레이션 기반 I/O 장치들을 사용하는 가상 데스크탑들은 성능이 떨어지고 고사양의 응용 프로그램을 지원할 수 없는 문제점을 가지고 있다. 본 논문에서는 이러한 서비스의 품질 및 성능 저하를 극복하기 위해 PCI기반 하드웨어 직접 할당기술을 이용한 망분리 가상 데스크탑 시스템을 제안한다. 제안하는 시스템은 하나의 물리적 데스크탑 컴퓨터에 서버가상화 기술을 이용하여 사용자에게 인터넷 등의 외부망과 인트라넷 등의 업무망 접속을 위한 독립적인 데스크탑을 제공한다. 이를 통해 물리적 망분리를 위한 별도의 데스크탑 설치 및 논리적 망분리를 위한 네트워크 패킷의 검사에 따른 성능의 저하 없이 가상 데스크탑 서비스를 이용한 물리적 네트워크 망분리시스템을 제공한다. IOV is a technology that supports one or more virtual desktops, and can share a single physical device. In general, the virtual desktop uses the virtual IO devices which are provided by virtualization SW, using SW emulation technology. Virtual desktops that use the IO devices based on SW emulation have a problem in which service quality and performance are declining. Also, they cannot support the high-end application operations such as 3D-based CAD and game applications. In this paper, we propose a physical network separation system using Virtual Desktop Service based on HW direct assignments to overcome these problems. The proposed system provides independent desktops that are used to access the intranet or internet using server virtualization technology in a physical desktop computer for the user. In addition, this system can also support a network separation without network performance degradation caused by inspection of the network packet for logical network separations and additional installations of the desktop for physical network separations.
Sunwook Kim,Jinyong Lee,Hyun Sook Lee 한국자기학회 2011 Journal of Magnetics Vol.16 No.3
Compared to acupuncture, the pulsed magnetic field (PMF) stimulus is a useful tool for treatment of many physical conditions and health maintenance due to its advantages as a noninvasive and nontoxic medical treatment. The purpose of this study was to investigate the effect of PMF stimulus direction at PC9 on the alpha activity of electroencephalogram (EEG) and vascular aging calculated from photoplethysmograph (PPG). It can be concluded that the direction of PMF stimulus affects the increase of alpha activity of EEG and PPG, indicating the vascular stiffness and the sclerosis level of blood vessels weakly relevant to the direction of PMF stimulus.
A simple synthesis of Ag2+xSe nanoparticles and their thin films for electronic device applications
Sunwook Kim,Duc Quy Vo,Dang Duc Dung,Sunglae Cho 한국화학공학회 2016 Korean Journal of Chemical Engineering Vol.33 No.1
A simple method to synthesize silver selenide nanoparticles has been proposed. By changing the ratio of Se-oleylamine complex and silver acetate in the reacting mixture at different temperatures, both size and stoichiometry of the silver selenide particles could be successfully controlled. The size of the nanoparticles was adjusted by changing reaction temperatures. The synthesized silver selenide nanoparticles showed size changes from 3 to 10 nm when the corresponding reaction temperatures were 40-100 oC, respectively. In addition to the size change, the stoichiometry of the synthesized nanoparticles (Ag2+xSe) could be adjusted by simply varying the ratio of Ag to Se precursors. Through XPS analyses the x value in Ag2+xSe was determined, and it changed between 0.54 and −0.03 by varying Ag/Se ratio from 2/0.75 to 2/4. The optical property of the nonstoichiometric Ag2+xSe nanoparticles was different from that of stoichiometric Ag2Se nanoparticles, but showed the plasmon absorption of Ag-Ag network. The plasmon absorption was decreased with the increased concentration of the Se precursor. Finally, the Ag2+xSe thin film in this work showed large magnetoresistance and successfully applied to prepare high-performance Schottky diode. The Ag2.06Se film exhibited the magnetoresistance effect up to 0.9% at only 0.8 T at room temperature. The voltage drop and breakdown voltage of the Schottky diode were 0.5 V and 9.3 V, respectively.