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Nam, Sung-Pill,Lee, Young-Hie,Bae, Seon-Gi,Lee, Sung-Gap The Korean Institute of Electrical and Electronic 2005 Transactions on Electrical and Electronic Material Vol.6 No.5
The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.
Nam, Sung-Pill,Lee, Sung-Gap,Bae, Seon-Gi,Lee, Young-Hie The Korean Institute of Electrical Engineers 2007 Journal of Electrical Engineering & Technology Vol.2 No.1
Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.
Electrical properties of the multilayered PZT/BaTiO₃/PZT thick films
Sung-Pill Nam,Sung-Gap Lee,Young-Hie Lee 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.1
Multilayered PZT/BaTiO₃/PZT thick/thin/thick films were fabricated by two different methods-thick films of Pb₁.₁(Zr0.52Ti0.48)O₃ by a screen printing method on alumina substrate electrode with Pt, thin films of BaTiO₃by a spin-coating method with PZT thick films and once more thick films of the PZT by a screen printing method on the BaTiO₃layer. We investigated the effect of phase, composition, and interfacial state of the BaTiO₃ thin film layers at the interface between the PZT thick films. The structural and the dielectric properties were investigated for the effect of various stacking sequences of sol-gel-prepared BaTiO₃ layers at the interface of the PZT thick films. The insertion of the BaTiO₃ interlayer yielded PZT thick films with homogeneous and dense grain structures regardless of the number of the BaTiO₃ layers. These results suggested that there is coexistence of the PZT phase and the BaTiO₃ phase or the presence of a modified BaTiO₃ at the interfaces between the PZT thick films. The leakage current density of a multilayered PZT-7 film is less that 1.5×10−9 A/cm2 at 5 V. Multilayered PZT/BaTiO₃/PZT thick/thin/thick films were fabricated by two different methods-thick films of Pb₁.₁(Zr0.52Ti0.48)O₃ by a screen printing method on alumina substrate electrode with Pt, thin films of BaTiO₃by a spin-coating method with PZT thick films and once more thick films of the PZT by a screen printing method on the BaTiO₃layer. We investigated the effect of phase, composition, and interfacial state of the BaTiO₃ thin film layers at the interface between the PZT thick films. The structural and the dielectric properties were investigated for the effect of various stacking sequences of sol-gel-prepared BaTiO₃ layers at the interface of the PZT thick films. The insertion of the BaTiO₃ interlayer yielded PZT thick films with homogeneous and dense grain structures regardless of the number of the BaTiO₃ layers. These results suggested that there is coexistence of the PZT phase and the BaTiO₃ phase or the presence of a modified BaTiO₃ at the interfaces between the PZT thick films. The leakage current density of a multilayered PZT-7 film is less that 1.5×10−9 A/cm2 at 5 V.
Nam, Sung-Pill,Lee, Sung-Gap,Lee, Young-Hie The Korean Institute of Electrical and Electronic 2010 Transactions on Electrical and Electronic Material Vol.11 No.5
$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.
The Dielectric Properties of BaTiO3/SrTiO3 Heterolayered Thick films by Screen Printing Method
Sung-Pill Nam,배선기,이성갑,이영희 한국전기전자재료학회 2005 Transactions on Electrical and Electronic Material Vol.6 No.5
The BaTiO3/SrTiO3 heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the BaTiO3/SrTiO3 thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the BaTiO3/SrTiO3 heterolayered thick films with sintering temperature of 1350 ˚C were about 751 and 1.74, respectively. The remanent polarization (Pr) of the pure (Ba0.5Sr0.5)TiO3 and BaTiO3/SrTiO3 heterolayered films are approximately 5.1 μC/cm2 and 10 μC/cm2. This study suggests that the design of the BaTiO3/SrTiO3 heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.
( Sung Woo Cho ),( Jung Hoon Cha ),( Na Ri Park ),( Won Hee Hur ),( Pill Soo Sung ),( Jong Young Choi ),( Seung Kew Yoon ),( Si Hyun Bae ),( Hee Chul Nam ) 대한간학회 2020 춘·추계 학술대회 (KASL) Vol.2020 No.1
Aims: Non-alcoholic fatty liver disease (NAFLD) is a metabolic- related disorder ranging from simple steatosis to more severe forms, but the exact mechanism of progression remains unknown. MicroRNAs(miR), a class of small noncoding RNAs, are implicated in controlling a variety of biological processes. The aim of this study is to investigate the regulatory and protective role of miR-22-3p in NAFLD progression. Methods: Both in vitro and in vivo models of NAFLD were generated by treating HepG2 and Huh-7 cells with palmitic acid (PA) and by feeding mice a high-fat diet (HFD), respectively. HE and Oil Red O staining were used to examine liver tissue morphology and lipid deposition, respectively. qRT-PCR (quantitative real time polymerase chain reaction) was used for investigate expression of miR, SIRT1, and proteins involved in lipogenesis Results: HFD-mice hepatic tissues and PA-treated HepG2 and Huh-7 cells presented excess lipid production. Both in vitro and in vivo NAFLD model displayed decreased miR-22-3p and SIRT1 expression as evidenced by qRT-PCR. Overexpression of miR-22-3p induced downregulation of FAS, PPAR gamma and SREBP-1c via upregulation of SIRT1 expression. Reduction of hepatic lipid accumulation was observed by Oil red O staining. Conclusions: In this study, miR-22-3p had a role in ameliorating hepatic lipogenesis by regulation of SIRT1 signal pathway in NAFLD model. The overexpressed miR-22-3p protects hepatocytes from lipid metabolism and suppresses hepatic lipogenesis, suggesting as a potential target for the therapeutic strategy of NAFLD.