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강혁진(Hyuk-Jin Kangㅠ),안성훈(Sung-Hoon Ahn),이재상(Jae-Sang Lee),김경균(Kyung-Gun Kim) 대한기계학회 2005 대한기계학회 춘추학술대회 Vol.2005 No.5
The research on surface modification technology has been advanced to improve the properties of engineering materials. Ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electrical properties of substrate’s surface using accelerated ions. In this research, nitrogen ions were implanted into aluminum substrates which would be used for mold of rubber materials. The composition of nitrogen ion implanted aluminum alloy and nitrogen ion distribution profile were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than that of untreated specimens. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that ion implantation of nitrogen enhances the surface properties of aluminum mold.
김희진(KIM Hee Jin),강민규(KANG Mill Kyu),김진학(KIM Jm Hak),박재한(PARK Jae Han),이상섭(LEE Sang Heon),이상헌(LEE Sang Sup),정인혁(CHUNG In Hyuk2) 대한체질인류학회 1997 대한체질인류학회지 Vol.10 No.2
연구자들은 한국인 어른 남녀 시신의 머리와 목 61 을 대상으로 깊은 층 육안해부를 시행하여 혀동맥의 형태를 조사하였다 혀동맥이 일어나는 유형은 위갑상동맥, 혀동맥, 그리고 얼굴동맥이 바깥목동액에서 따로 가지를 내어 나뉘는 경우가 563% 호 가장 않았으며, 얼굴동맥과 혀동맥이 강은 가지에서 얼어나 나뉘는 경우 (312%), 그리고 위 강상동액과 혀동맥이 같은 가지에서 나뉘는 경우 (12 5%) 등이 있었다. 혀동맥과 혀동맥의 둘째 부분은 덮는 목뿔혀근 과의 영대학적 관계는 각각 혀동맥의 첫째 부분이 목뿔혀근 뒤에서 심하게 휘어져 깊은 층으로 들어가는 유형 (41 2 %), 그리고 혀동맥의 첫째 부분이 목뿔혀근의 뒤쪽 근육모셔리 바로 뒤흘 지나 깊은 층으로 들어가는 경우가 661% 로 가장 많았다 목뿔혀근 깊은층에서 혀동맥의 둘째 부분이 달리는 양상은 급하게 위쪽으로 꺾역 달리다가 다시 앞쪽으로 꺾여 혀의 깊은 곳으로 들어가는 경우와 목뿔빼에서 혀쪽으로 완만한 굽이플 이루며 올라가는 경우가 비슷한 반도로 관찰되었다. 입안바닥에 분포하는 혀밑동맥이 혀동맥 셋째 부분에서 나오는 경우슨 전체의 590% 에서만 관창되었으며 그 외는 대부분 얼굴동맥의 턱끝 및동맥 가지가 턱옥뽕근응 옳고 입안바닥에 분포하였다. 따라서 연구자들은 한국인 업안바 닥에는 혀동액이 전체의 59%에서만 분포하며 그외는 영굴동액의 턱끝밑동맥 가지 , 그리고 기타 다른 동맥의 가지들이 분포한다는 사실을 확인하였다
Kang, Min Seok,Lee, Dae-Hyuk,Lee, Kyung-Jae,Kim, Hee Soo,Ahn, Jihoon,Sung, Yung-Eun,Yoo, Won Cheol The Royal Society of Chemistry 2018 New Journal of Chemistry Vol.42 No.23
<P>Implementation of metal-organic frameworks (MOFs) as a precursor and/or template to synthesize metal/metal oxide/metal carbide nanoparticles within a carbon framework (M/MO/MC@C) <I>via</I> thermolysis has attracted considerable interest for electrochemical applications. In particular, the tunability of the weight content and crystallinity of M/MO/MC nanoparticles and porosity control of the morphology-preserved carbon matrix are highly desirable factors for governing the electrochemical performance of M/MO/MC@C composites. Herein, we report a facile synthesis method for adjusting the porosity, content, and crystallinity of M/MO/MC@C composites that are pseudomorphically converted from MOFs (M-HKUST-1, M: Cu and Zn; M-MOF-74, M: Co, Fe, Mg; and ZIF-8). Vapor phase polymerization (VPP), which is a site-specific gas-phase polymerization occurring at open metal sites of MOFs, was first employed to prepare morphology- and crystallinity-preserved polymer@MOF composites, which were then subjected to thermolysis to obtain M/MO@C composites. The polymer content used for VPP was directly related to the M/MO/MC nanoparticle weight content as well as the porosity of the carbon framework. In addition, crucial factors governing the crystallinity of final M/MO/MC nanoparticles were clearly classified in terms of the standard reduction potential of metal nodes and thermodynamic calculation for carbothermic reduction and carbide formation. To identify the advantages of morphology-preserved and content- and porosity-optimized MO@C composites for electrochemical applications, a series of CuO@C samples and CuO obtained from the direct oxidation of MOFs were tested as anode materials for lithium-ion batteries (LIBs). The optimized CuO@C sample exhibited superior electrochemical performance, for instance outstanding long-term stability with a remarkable specific capacity of 410 mA h g<SUP>−1</SUP> after 1000 cycles at a rate of 1000 mA g<SUP>−1</SUP>.</P>