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Lee, Chunghun,Srisungsitthisunti, Pornsak,Park, Sangphill,Kim, Seongmin,Xu, Xianfan,Roy, Kaushik,Janes, David B.,Zhou, Chongwu,Ju, Sanghyun,Qi, Minghao American Chemical Society 2011 ACS NANO Vol.5 No.2
<P>Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transistors based on In<SUB>2</SUB>O<SUB>3</SUB> nanowires, improve the saturation of the source-drain current, and permanently shift the threshold voltage to the positive direction. We applied this technique and successfully shifted the switching threshold voltages of NMOS-based inverters and improved their noise margin, in both depletion and enhancement modes. Our demonstration provides a method to trim the parameters of individual nanowire transistors, and suggests potential for large-scale integration of nanowire-based circuit blocks and systems.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2011/ancac3.2011.5.issue-2/nn102723w/production/images/medium/nn-2010-02723w_0005.gif'></P>
Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors using Femtosecond Laser
Kim, Seongmin,Kim, Sunkook,Srisungsitthisunti, Pornsak,Lee, Chunghun,Xu, Min,Ye, Peide D.,Qi, Minghao,Xu, Xianfan,Zhou, Chongwu,Ju, Sanghyun,Janes, David B. American Chemical Society 2011 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.115 No.34
<P>Nanowire materials have gained great interest as promising candidates for high-performance logic devices to sustain the progress in device scaling. However, little research has been conducted to investigate the role of contacts on the device performance accompanied by an appropriate physical model in nanodevices, although effects of the contacts will prevail as the channel scales. In this study, we investigate the effect of annealing using a femtosecond-laser focused at the contact region between the source-drain electrodes and the nanowire. On the basis of the direct comparison of device characteristics before and after annealing, a contact model is introduced, which could be generally applicable to nanowire transistors with overlap between gate region and source-drain regions. Low-frequency noise measurements in the devices reveal that the <I>I</I><SUB>d</SUB><SUP>2</SUP> normalized noise spectrum and Hooge’s constant are reduced following laser annealing.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2011/jpccck.2011.115.issue-34/jp203342j/production/images/medium/jp-2011-03342j_0004.gif'></P>