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An Etch-Stop Technique Using Cr2O3 Thin Film and Its Application to Silica PLC Platform Fabrication
신장욱,한영탁,성희경,김제하,Dong-JungKim,Sang-HoPark,Soo-JinPark 한국전자통신연구원 2002 ETRI Journal Vol.24 No.5
Using Cr2O3 thin film, we developed a novel etch-stop technique for the protection of silicon su rface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 μm without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lighwave circuit platforms for opto-electronic hybrid integration.