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- 저자 : Silin Han (검색결과 1 건)
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Lingyue Tan,Silin Han,Shuhui Chen,Tao Hang,Huiqin Ling,Yunwen Wu,Ming Li 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.2
Thermal treatment is an effective way to decrease the resistivity and internal stress by inducing grain growth accompaniedwith redistribution of embedded impurities. With the narrowing of Cu interconnects in IC packaging, the increased resistanceis becoming the main issue that hindering the electrical performance of IC. Herein, a laser annealing method by linerscanning (LALS) to anneal the Cu interconnects were reported which provide a gradient thermal field for the crystallographic/microstructure transition. The impacts of laser annealing on the sheet resistance of the electroplating Cu films wereinvestigated in aspects of microstructure and phase field simulation. Cu films treated by LALS owned larger average grainsize, better recrystallization fraction, and significantly higher average grain aspect ratio than conventional annealing, whichindicated the increased driving force for grain boundaries evolution by LALS method. This study exhibited the direct evidenceon the impacts of laser annealing process on the resistance of electroplated Cu films. The laser annealing process witha local temperature gradient caused a significant decline in Cu electrical resistance compared to the conventional annealingprocess, indicating its extraordinary potential in improving Cu wire conductivity. This work will provide a scientific basis forselecting the post-treatment process for electrodeposited Cu films to achieve ideal electrical properties and microstructurein electronics industry applications.
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