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Shirong Huang,Min Tang,Fenfen Chen,Shengnan Zhao,Dongfang Chen 한국축산식품학회 2024 한국축산식품학회지 Vol.44 No.2
The color, lipid oxidation, heme iron (HI) and non-heme iron (NHI) contents, metmyoglobin content and Soret band of myoglobin of ground pork subjected to supercritical CO2 treatment under different conditions, or to heat treatment (40℃, 2 h) and subsequent storage at 4℃ were evaluated during 9-day period. Supercritical CO2 treatment significantly increased CIE L* and CIE b* values of ground pork during subsequent storage, while the HI content was slightly affected. In general, CIE a* value and metmyoglobin content were decreased. Supercritical CO2 treatment for 2 h could increase the thiobarbituric acid-reactive substances (TBARS) value, while treatment for 1 h or less had no effect. The NHI content could be increased only after treatment at above 40℃ or 17.2 MPa for 2 h. The Soret band of myoglobin was shifted to longer wavelength. Increasing treatment temperature from 35℃ to 45℃ could increase CIE L*, CIE a*, CIE b* and TBARS values, HI and NHI contents of the ground pork, while decreasing metmyoglobin content. As the treatment pressure increased from 13.8 MPa to 20.7 MPa, CIE b* and TBARS values were decreased, while the NHI and metmyoglobin contents were increased. However, the other parameters were unchanged. Extending exposure time from 0.5 h to 2 h could increase CIE L*, CIE b* and TBARS values, HI contents, while decreasing CIE a* value and metmyoglobin content. Correlation analysis showed that the TBARS value was significantly and negatively correlated with the HI content or metmyoglobin content in samples treated at 40℃ or above for 2 h.
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Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-Walled Carbon Nanotubes
Wei Mu,곽은혜,Bingan Chen,Shirong Huang,Michael Edwards,Yifeng Fu,Kjell Jeppson,Kenneth Teo,정구환,Johan Liu 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.3
Synthesisof horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) bychemical vapor deposition (CVD) directly on quartz seems very promising for thefabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesisof HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, coolingand growth periods, but also prevents contamination of the chamber. However, sincemost synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this wellestablishedprocess to a cold-wall chamber becomes extremely crucial. Here, in orderto transfer the CVD growth technology from a hot-wall to a cold-wall chamber, asystematic investigation has been conducted to determine the influence of processparameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVDchamber was upgraded with a top heater to complement the bottom substrate heater;the first reason to maintain a more uniform temperature profile during HA-SWCNTsgrowth, and the second reason to preheat the precursor gas flow before projecting itonto the catalyst. Our results show that the addition of a top heater had a significanteffect on the synthesis. Characterization of the CNTs shows that the average density ofHA-SWCNTs is around 1 - 2 tubes/μm with high growth quality as shown by Ramananalysis.
ScienceON
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