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      저자 : Shazia Jabeen (검색결과 2 건)
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        Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory

        Muhammad Ismail,Shazia Jabeen,Tahira Akber,Ijaz Talib,Fayyaz Hussain,Anwar Manzoor Rana,Muhammad Hussain,Khalid Mahmood,Ejaz Ahmed,Dinghua Bao 한국물리학회 2018 Current Applied Physics Vol.18 No.8

        Effect of oxygen annealing on bipolar resistive switching (BRS) properties of TiN/ZnO/CeO2-x/Pt devices was investigated. Bilayer ZnO/CeO2-x thin films were fabricated by rf-magnetron sputtering. It was observed that the improvement in cycle-to-cycle endurance degradation and uniformity of the bilayer ZnO/CeO2-x thin film is optimum at 400 °C annealing temperature due to decrease in oxygen vacancies during annealing, as confirmed by x-ray photoelectron spectroscopy. The BRS could be caused by the formation of interfacial TiON layer, which is most likely to be accountable for creating an adequate quantity of oxygen vacancies necessary for the formation and rupture of conductive filaments. Smaller Gibbs free energy of the formation of interfacial TiON (−611 kJmol−1) layer as compared to bilayer film ZnO (−650 kJmol−1) and CeO2 (−1024 kJmol−1) results in an easier re-oxidation of the filaments through the oxygen exchange with TiN top electrode. The analysis of current– voltage characteristics shows that the charge transport mechanism is Schottky emission. Moreover, the temperature dependence of high resistance state (HRS) and low resistance state (LRS) revealed the physical origin of the RS mechanism, which entails the oxygen vacancies for the formation and rupture of conducting paths.

      • Effect of Bilayer CeO <sub>2−x</sub> /ZnO and ZnO/CeO <sub>2−x</sub> Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

        Ismail, Muhammad,Talib, Ijaz,Rana, Anwar Manzoor,Akbar, Tahira,Jabeen, Shazia,Lee, Jinju,Kim, Sungjun Springer US 2018 NANOSCALE RESEARCH LETTERS Vol.13 No.1

        <P>Memory devices with bilayer CeO<SUB>2−x</SUB>/ZnO and ZnO/CeO<SUB>2−x</SUB> heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heterostructure and electroforming polarity caused significant variations in resistive switching (RS) properties. Results have revealed that the electroforming polarity has great influence on both CeO<SUB>2−x</SUB>/ZnO and ZnO/CeO<SUB>2−x</SUB> heterostructure performance such as electroforming voltage, good switching cycle-to-cycle endurance (~ 10<SUP>2</SUP>), and ON/OFF ratio. A device with CeO<SUB>2−x</SUB>/ZnO heterostructure reveals good RS performance due to the formation of Schottky barrier at top and bottom interfaces. Dominant conduction mechanism of high resistance state (HRS) was Schottky emission in high field region. Nature of the temperature dependence of low resistance state and HRS confirmed that RS is caused by the formation and rupture of conductive filaments composed of oxygen vacancies.</P>

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