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RISS 인기검색어
- 검색키워드
- 저자 : Shaivalini Singh (검색결과 4 건)
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Characterization of Ag/ZnO Nanorod Schottky Diode-based Low-voltage Ultraviolet Photodetector
Shaivalini Singh,S. Jit,박시현 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2017 NANO Vol.12 No.5
Ultraviolet (UV) detection characteristics of Ag Schottky contacts with ZnO nanorods (ZnONRs) grown on Indium Tin Oxide (ITO)-coated glass substrates have been investigated. A lowtemperature hydrothermal method was used for growing ZnO-NRs. Circular contacts of Ag were deposited above the ZnO-NRs/ITO samples using the shadow mask technique. The structural properties of the ZnO-NRs were characterized by using scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD). The results revealed a (0002) crystal orientation and a wurtzite hexagonal structure. The electrical characteristics of the Ag/ ZnO-NR Schottky contacts were studied at forward applied bias over the range 0 V to 1 V, under dark and UV illumination. The dark and photocurrents were 1.29 x 10 -5 A and 2.16 x 10 -5 A, respectively, and the contrast ratio (ratio of photocurrent to dark current) was 1.67 at +1.0 V for these devices. The results show that these devices could be useful for cost-effective and low-voltage UV detection applications.
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Influence of Al doping on structural and optical properties of hydrothermally grown ZnO nanorods
Shaivalini Singh,박일규,박시현 한양대학교 세라믹연구소 2016 Journal of Ceramic Processing Research Vol.17 No.3
In this work, aluminum (Al) doped ZnO nanorods (NRs) were prepared by hydrothermal method by doping Al with 1, 2 and3 in weight percentage (wt. %) in addition to undoped ZnO NR. The influence of Al doping on the structural and opticalproperties of ZnO NRs were studied in this paper systematically. The surface morphology and optical properties of all thedoped and undoped ZnO NRs samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM),UV–vis spectroscopy and photoluminescence (PL) measurements. We found that the Al doping affected the structural andoptical properties of the ZnO NRs, including their PL properties, absorption values and optical band gaps etc. It is observedfrom PL as well as UV-Vis spectroscopy that the bandgap value increases gradually with increase of the Al dopantsconcentration due to Burstein-Moss effect. The variation of bandgap according to Al dopants was extracted from PL also andcompared with that of the UV-vis results.
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Theoretical and Experimental Study of UV Detection Characteristics of Pd/ZnO Nanorod Schottky Diodes
Shaivalini Singh,Pramod Kumar Tiwari,Hemant Kumar,Yogesh Kumar,Gopal Rawat,Sanjay Kumar,Kunal Singh,Ekta Goel,S. Jit,박시현 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2017 NANO Vol.12 No.11
In this work, we report theoretical and experimental study of Pd/ZnO nanorod (NR) Schottky diodes-based ultraviolet photodetector (UV-PD). The ZnO-NRs are deposited on indium tin oxide (ITO) coated glass substrates by using a low-temperature hydrothermal method. The surface morphology of the ZnO-NRs film is characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The SEM image shows vertically grown NRs with uniformity, and XRD shows the preferred (002) orientation of ZnO-NR films. The current–voltage characteristics of Pd/ZnO-NR Schottky diodes are studied under dark and UV light. A voltage bias from -1V to +1V is applied and the ratio of photocurrent to dark current was ( ~0.17 x 10 2 at V = 0.5V) calculated from the I–V curve. The value of responsivity was found to be 0.111A/W at λ = 365 nm and at bias = 0.50 V. An approximated UV-PD structure has also been numerically simulated using three-dimensional (3D) device simulator from Visual TCAD of Cogenda International. The simulated I–V characteristics have also been plotted under both dark and light conditions. The simulated results are found to be following the nature of experimental results.
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Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application
( Shaivalini Singh ),( Si Hyun Park ) 대한금속재료학회(구 대한금속학회) 2016 대한금속·재료학회지 Vol.54 No.5
The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications. (Received November 5, 2015)
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