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A D-Band Integrated Signal Source Based on SiGe 0.18 μm BiCMOS Technology
Seungyoon Jung,Jongwon Yun,Jae-Sung Rieh 한국전자파학회JEES 2015 Journal of Electromagnetic Engineering and Science Vol.15 No.4
This work describes the development of a D-band (110?170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50?75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is 900 × 1,890 μm², including RF and DC pads.
푸쉬-푸쉬 방식을 이용한 CMOS 기반 D-밴드 전압 제어 발진기
정승윤(Seungyoon Jung),윤종원(Jongwon Yun),김남형(Namhyung Kim),이재성(Jae-Sung Rieh) 한국전자파학회 2014 한국전자파학회논문지 Vol.25 No.12
본 연구에서는 65-nm CMOS 공정을 이용하여 D-밴드 주파수 대역(110~170 GHz)의 전압 제어 발진기(voltage controlled oscillator)를 제작 및 측정을 수행하였다. 발진기의 구조는 푸쉬-푸쉬(push-push) 방식에 기반을 두고 있다. 제작된 전압 제어 발진기의 동작 주파수의 범위는 152.7~165.8 GHz로 측정되었으며 이때의 출력 전력은 -17.3 dBm에서 -8.7 dBm까지의 값을 보였다. 이 회로의 위상잡음(phase noise)은 10 MHz 오프셋에서 -90.9 dBc/Hz로 측정되었고, 측정용 패드를 포함한 제작된 칩의 크기는 470 μm×360 μm이다. In this work, a D-band VCO(Voltage Controlled Oscillator) has been developed in a 65-nm CMOS technology. The circuit was designed based on push-push mechanism. The output oscillation frequency of the fabricated VCO varied from 152.7 GHz to 165.8 GHz, and the measured output power was from -17.3 dBm to -8.7 dBm. A phase noise of -90.9 dBc/Hz is achieved at 10 MHz offset. The chip size of the circuit is 470 μm×360 μm including the probing pads.
EFFECT OF ANISOTROPIC PLASTICITY ON THE PREDICTION OF FORMABILITY OF E-FORM MAGNESIUM ALLOY SHEET
Yongheon Lee,Seungyoon Jung,Hansung Baek,Jinwoo Lee,Moon-Seok Choi,이명규 한국자동차공학회 2019 International journal of automotive technology Vol.20 No.6
In this paper, the formability of E-FORM magnesium alloy sheet (as one of recent alloys for automotive magnesium sheets) is analyzed based on the comparison between the results of actual magnesium (Mg) roof forming and those of finite element (FE) simulations. The FE model considers anisotropic mechanical properties and forming limit diagram (FLD) of the investigated magnesium alloy sheet. Through the coupled experimental and numerical procedure, the dominating factors for improving the accuracy of the numerical simulations are further studied. A commercial finite element analysis program, AUTOFORM®, is used for the simulations, in which identified mechanical properties and forming limit criteria are implemented as functions of temperature and strain rate. The improvement in the prediction of formability during the warm forming of the E-FORM magnesium alloy sheet can be obtained by considering a modified hardening law at large strain region, sheet anisotropy, and the properly measured forming limit curve.
Two 320 GHz Signal Sources Based on SiGe HBT Technology
Yun, Jongwon,Yoon, Daekeun,Jung, Seungyoon,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung THE INSTITUTE OF ELECTRICAL ENGINEERS 2015 IEEE Microwave and Wireless Components Letters Vol. No.
<P>Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a <TEX>$G_{{m}}$</TEX>-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of <TEX>${-}6.3$</TEX> dBm and a phase noise of <TEX>${-}96.6$</TEX> dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and <TEX>${-}94.7$</TEX> dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.</P>
혈액투석 유지 환자에서 혈청 인 수치와 동정맥루 기능부전의 상관관계
최유범 ( Yu Bum Choi ),김정현 ( Jung Hyun Kim ),이미정 ( Mi Jung Lee ),최승윤 ( Seungyoon Choi ),김형종 ( Hyung Jong Kim ) 대한내과학회 2020 대한내과학회지 Vol.95 No.1
Background/Aims: Maintaining vascular access (VA) is very important in the management of hemodialysis (HD) patients. Therefore, the identification of risk factors for decreased vascular access flow has clinical relevance. The aim of the present study was to investigate the impact of serum phosphorus (P) on autologous arteriovenous fistula flow in HD patients. Methods: Sixty-two maintenance HD patients who visited the dialysis unit of CHA Bundang Medical Center between November 2016 and December 2017 were included in the study. Serum P levels were obtained every month, and time-averaged serum P was calculated. All patients had left arm arteriovenous fistulas (AVF; side-to-side anastomosis). AVF flow was assessed by Transonic HD 03. Decreased AVF flow was defined as < 600 mL/min. Results: Decreased AVF flow was observed in 14 of 62 patients. In univariate analysis and multivariable analysis, higher serum P had a significant independent association with decreased AVF flow. Advanced age, reduced ejection fraction, low blood flow rate in dialysis, and higher serum calcium were not associated with AVF flow. Conclusions: The present study demonstrated that higher serum P was an independent risk factor for decreased autologous AVF flow in maintenance HD patients. Serial monitoring of serum P may be helpful in stratifying patients by risk of AVF dysfunction, and proper management of serum P levels may be helpful in maintaining flow through autologous AVFs. (Korean J Med 2020;95: 36-42)
Lee, Jieun,Goh, Sung-Ho,Song, Naaleum,Hwang, Jung-Ah,Nam, Seungyoon,Choi, Il Ju,Shin, Aesun,Kim, In-Hoo,Ju, Mi-Ha,Jeong, Jin Sook,Lee, Yeon-Su Elsevier 2012 The American journal of pathology Vol.181 No.1
<P>In an effort to identify novel genes related to the prognosis of gastric cancer, we performed gene expression profiling and found overexpressed levels of human interferon-induced transmembrane protein 1 (<I>IFITM1</I>). We validated the gastric cancer–specific up-regulation of IFITM1 and its association with cancer progression. We also studied its epigenetic regulation and tumorigenesis-related functions. Expression of IFITM1 was evaluated in various human gastric cancer cells and in 35 patient tumor tissues by quantitative RT-PCR and Western blot analyses. The results showed highly up-regulated IFITM1 in cancer cell lines and tissues. Furthermore, IHC studies were performed on 151 patient tissues, and a significant correlation was revealed between higher IFITM1 expression and Lauren's intestinal type (<I>P</I> = 0.007) and differentiated adenocarcinoma (<I>P</I> = 0.025). Quantitative studies of DNA methylation for 27 CpG sites in the regulatory region showed hypermethylation in cells expressing low levels of IFITM1. Methylation-dependent IFITM1 expression was confirmed further by <I>in vitro</I> demethylation using 5-aza-2′-deoxycytidine and luciferase assays. The functional analysis of IFITM1 by silencing of its expression with small-interfering RNA showed decreased migration and invasiveness of cancer cells, whereas its overexpression exhibited the opposite results. In this study, we demonstrated gastric cancer–specific overexpression of IFITM1 regulated by promoter methylation and the role of IFITM1 in cancer prognosis.</P>