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Park, Ji Soo,Jeung, Hei-Cheul,Rha, Sun Young,Ahn, Joong Bae,Kang, Beodeul,Chon, Hong Jae,Hong, Min Hee,Lim, Seungtaek,Yang, Woo Ick,Nam, Chung Mo,Chung, Hyun Cheol Springer 2014 Cancer chemotherapy and pharmacology Vol.74 No.4
<P>We conducted a phase II study evaluating safety and efficacy of combination gemcitabine and capecitabine therapy for metastatic breast cancer patients following anthracycline and taxane treatment in Korea.</P>
High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV)
Joohee Kim,Jun So Pak,Jonghyun Cho,Eakhwan Song,Jeonghyeon Cho,Heegon Kim,Taigon Song,Junho Lee,Hyungdong Lee,Kunwoo Park,Seungtaek Yang,Min-Suk Suh,Kwang-Yoo Byun,Joungho Kim IEEE 2011 IEEE transactions on components, packaging, and ma Vol.1 No.2
<P>We propose a high-frequency scalable electrical model of a through silicon via (TSV). The proposed model includes not only the TSV, but also the bump and the redistribution layer (RDL), which are additional components when using TSVs for 3-D integrated circuit (IC) design. The proposed model is developed with analytic <I>RLGC</I> equations derived from the physical configuration. Each analytic equation is proposed as a function of design parameters of the TSV, bump, and RDL, and is therefore, scalable. The scalability of the proposed model is verified by simulation from the 3-D field solver with parameter variations, such as TSV diameter, pitch between TSVs, and TSV height. The proposed model is experimentally validated through measurements up to 20 GHz with fabricated test vehicles of a TSV channel, which includes TSVs, bumps, and RDLs. Based on the proposed scalable model, we analyze the electrical behaviors of a TSV channel with design parameter variations in the frequency domain. According to the frequency-domain analysis, the capacitive effect of a TSV is dominant under 2 GHz. On the other hand, as frequency increases over 2 GHz, the inductive effect from the RDLs becomes significant. The frequency dependent loss of a TSV channel, which is capacitive and resistive, is also analyzed in the time domain by eye-diagram measurements. Due to the frequency dependent loss, the voltage and timing margins decrease as the data rate increases.</P>
Modeling and Analysis of Through-Silicon Via (TSV) Noise Coupling and Suppression Using a Guard Ring
Jonghyun Cho,Eakhwan Song,Kihyun Yoon,Jun So Pak,Joohee Kim,Woojin Lee,Taigon Song,Kiyeong Kim,Junho Lee,Hyungdong Lee,Kunwoo Park,Seungtaek Yang,Minsuk Suh,Kwangyoo Byun,Joungho Kim IEEE 2011 IEEE transactions on components, packaging, and ma Vol.1 No.2
<P>In three-dimensional integrated circuit (3D-IC) systems that use through-silicon via (TSV) technology, a significant design consideration is the coupling noise to or from a TSV. It is important to estimate the TSV noise transfer function and manage the noise-tolerance budget in the design of a reliable 3D-IC system. In this paper, a TSV noise coupling model is proposed based on a three-dimensional transmission line matrix method (3D-TLM). Using the proposed TSV noise coupling model, the noise transfer functions from TSV to TSV and TSV to the active circuit can be precisely estimated in complicated 3D structures, including TSVs, active circuits, and shielding structures such as guard rings. To validate the proposed model, a test vehicle was fabricated using the Hynix via-last TSV process. The proposed model was successfully verified by frequency- and time-domain measurements. Additionally, a noise isolation technique in 3D-IC using a guard ring structure is proposed. The proposed noise isolation technique was also experimentally demonstrated; it provided -17 dB and -10dB of noise isolation between the TSV and an active circuit at 100 MHz and 1 GHz, respectively.</P>