http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Determination of the Metallothioneins by Nuclear Magnetic Resonance Spectroscopy in Solution
Choi, Seungpyung,Ryang, Kyungseung,Shin, Yongjin,Hong, Kwangjoon,Baek, Changhyun,Chang, Chaik,Kim, Namsoo CHOSUN UNIVERSITY 1997 Basic Science and Engineering Vol.1 No.1
The discussion of 113Cd NMR with metallothionein (MT) is limited to a comment on its use as an analytical tool. It is real condition that the possibility of the multinuclear NMR spectroscopy is valuating carefully, not only the papers which are submitted at the academic world but also the application of relating to this NMR are rare until the recent. As the application examples of the multinuclear NMR spectroscopy, we can detected cadmium of low concentraion in the MT which is interested in Many branch related with biochemistry. Phantom experiments are executed with known samples which contained the minimum quantity of cadmium. The new radio-frequency (RF) pulse sequence can be demonstrated by the finding of chemical shift and pulse width(PW) value which is parameter of 113Cd NMR signal intensity can be increased.
Growth and Temperature Dependence of The Photocurrent Spectra for HgCdTe Epilatyers
Seungnam Baek,Kwangjoon Hong,Sangha you,Sangyoul Lee,Seungpyung Choi,Hunsang Chung,Youngjin Shin 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Hg$_{1-x}$Cd$_x$Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 $^\circ$C for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu$m or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.
The Growth and Photoconductive Characteristics of ?? Thin Films by the Hot Wall Epitaxy
Hong, Kwangjoon,Suh, Sangseok,Jeong, Junwoo,You, Sangha,Choi, Seungpyung,Lee, Koankio,Lee, Sangyoul,Kim, Haeyeon,Moon, Jongdae,Shin, Yongjin,Kim, Haesuk CHOSUN UNIVERSITY 1997 Basic Science and Engineering Vol.1 No.1
The CdS₁? Se? thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method (HWE). The temperatures the source and the substrate temperature are 580℃ and 440℃ respectively. The crystalline structure of thin films was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(r), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time.
The Growth and Photoconductive Characteristics of ZnGa₂Se₄ Epilayers by the Hot Wall Epitaxy
Hong, Kwangjoon,Suh, Sangseok,Jeong, Junwoo,You, Sangha,Lee, Koankio,Choi, Seungpyung,Lee, Sangyoul,Kim, Haeyeon,Moon, Jongdae,Shin, Yongjin,Kim, Haesuk CHOSUN UNIVERSITY 1997 Basic Science and Engineering Vol.1 No.1
The stochiometric mix of evaporating materials for the ZnGa₂Se₄single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants a。and c。were a。=5.51 A, c。=10.98 A. To obtains the single crystal thin films, ZnGa₂Se₄mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were 590℃ and 450℃, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (r), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time.