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Lee, Seungjin,Kim, Youngwoong,Wu, Ziang,Lee, Changyeon,Oh, Seung Jin,Luan, Nguyen Thanh,Lee, Junbok,Jeong, Dahyun,Zhang, Kai,Huang, Fei,Kim, Taek-Soo,Woo, Han Young,Kim, Bumjoon J. American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.48
<P>Aqueous-processed all-polymer solar cells (aq-APSCs) are reported for the first time by developing a series of water/ethanol-soluble naphthalenediimide (NDI)-based polymer acceptors [P(NDIDEG-T), P(NDITEG-T), and P(NDITEG-T2)]. Polymer acceptors are designed by using the backbones of NDI-bithiophene and NDI-thiophene in combination with nonionic hydrophilic oligoethylene glycol (OEG) side chains that facilitate processability in water/ethanol mixtures. All three polymers exhibit sufficient solubility (20-50 mg mL<SUP>-1</SUP>) in the aqueous medium. The P(NDIDEG-T) polymer with shorter OEG side chains is the most crystalline with the highest electron mobility, enabling the fabrication of efficient aq-APSCs with the maximum power conversion efficiency (PCE) of 2.15%. Furthermore, these aq-APSCs are fabricated under ambient atmosphere by taking advantage of the eco-friendly aqueous process and, importantly, the devices exhibit outstanding air-stability without any encapsulation, as evident by maintaining more than 90% of the initial PCE in the air after 4 days. According to a double cantilever beam test, the interfacial adhesion properties between the active layer and electron/hole transporting layers were remarkably improved by incorporating the hydrophilic OEG-attached photoactive layer, which hinders the delamination of the constituent layers and prevents the increase of series resistance, ultimately leading to enhanced durability under ambient conditions. The combination of increased device stability and minimal environmental impact of these aq-APSCs demonstrates them to be worthy candidates for continued development of scalable polymer solar cells.</P> [FIG OMISSION]</BR>
Formation of ZnO nanostructures grown on Si and SiO2 substrates.
Lee, Seungjin,Park, Eunkyung,Lee, Jongtack,Park, Taehee,Lee, Sang-Hwa,Kim, Jae-Yong,Yi, Whikun American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>ZnO nanorods are grown on Si-based substrate by chemical bath deposition method in aqueous solution using zinc nitrate hexahydrate. Various substrates having different surface morphology are used to evaluate their effect on growing ZnO nanorods, such as flat Si(100) wafer, small and large textured-Si wafer, porous silicon, flat SiO2 wafer, small and large textured-SiO2 wafer. The length, diameter, geometry, and coverage density of ZnO nanorods are investigated by field-emission scanning electron microscopy and summarized. SiO2 is a preferred substrate for the growth of ZnO nanorods to Si if the surface morphology of substrate is same, and the textured surface has much higher coverage density (> 95%) than the flat surface. Each nanorod is vertically grown along the c-axis on the top of each pyramid face for textured substrate, and forms the 3D sea sponge-like ZnO structure. The characteristics of ZnO nanorods grown on various substrates are analyzed by grazing-angle X-ray diffraction (XRD) and photoluminescence (PL) measurements.</P>
Choi, Hyeongsu,Lee, Jeongsu,Shin, Seokyoon,Lee, Juhyun,Lee, Seungjin,Park, Hyunwoo,Kwon, Sejin,Lee, Namgue,Bang, Minwook,Lee, Seung-Beck,Jeon, Hyeongtag IOP Pub 2018 Nanotechnology Vol.29 No.21
<P>Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS<SUB>2</SUB>) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS<SUB>2</SUB> thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS<SUB>2</SUB> thin film by annealing at 450 °C for 1 h in H<SUB>2</SUB>S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS<SUB>2</SUB> thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 10<SUP>5</SUP> and 10<SUP>4</SUP> cm<SUP>−1</SUP> in the visible region, respectively. In addition, SnS and SnS<SUB>2</SUB> thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS<SUB>2</SUB> directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS<SUB>2</SUB> thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 10<SUP>3</SUP> and mobilities of 0.21 and 0.014 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS<SUB>2</SUB> thin films were 6.0?×?10<SUP>16</SUP> and 8.7?×?10<SUP>13</SUP> cm<SUP>−3</SUP>, respectively, in this experiment.</P>
Lee, Sang Yun,Nam, Yun Seok,Yu, Jae Choul,Lee, Seungjin,Jung, Eui Dae,Kim, Si-Hoon,Lee, Sukbin,Kim, Ju-Young,Song, Myoung Hoon American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.42
<P>Metal halide perovskites have been actively studied as promising materials in optoelectronic devices because of their superior optical and electrical properties and have also shown considerable potential for flexible devices because of their good mechanical properties. However, the large hole injection barrier and exciton quenching between the perovskite emitter and poly(3,4-ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS) can lead to the reduction in device efficiency. Here, a nonconductive fluorosurfactant, Zonyl FS-300 (Zonyl), is introduced into the PEDOT:PSS hole transport layer, which reduces the hole injection barrier and exciton quenching at the PEDOT:PSS/perovskite interface. Moreover, a flexible perovskite light-emitting diode with a polymer-silver nanowire composite electrode is demonstrated, showing a maximum current efficiency (CE<SUB>max</SUB>) of 17.90 cd A<SUP>-1</SUP>, and this is maintained even after 1000 cycles of bending with a 2.5 mm bending radius.</P> [FIG OMISSION]</BR>
The Basis of Sadness : Focusing on the Issue of Ethnicity in Kim Hak-young’s Works
Seungjin Lee 건국대학교 아시아·디아스포라 연구소 2020 International Journal of Diaspora&Cultural Critici Vol.10 No.2
Discussing Zainichi literature means that we must take into consideration the problems behind it. This may be true when discussing other literature, but Zainichi literature has a risk that the problems may be emphasized earlier due to the special circumstances of Japan and the work itself may not be visible. Therefore, when discussing Zainichi literature, it is necessary to pay attention to the environment surrounding Japan, such as political factors, and to study each work in a well-balanced perspective. The same can be said for the study of Kim hak-young’s works. In His works, the father’s ‘house’ does not appear as a space that symbolizes the ‘history of Korean-Japanese people.’ Rather ethnicity, in the works of Kim Hak-young, is more crosely related to the alienation and inevitable exclusion of human beings. This paper looks at the theme of “ethnicity” that he was obsessed to the end by looking over his entire work.