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하치조신경 및 설신경 손상 평가를 위한 한국인 정상 성인의 하순-이부 및 혀의 감각 조사
이종호,이세영,송승일,이은진,안강민,김성민,명훈,황순정,서병무,최진영,정필훈,김명진 大韓顎顔面成形再建外科學會 2003 Maxillofacial Plastic Reconstructive Surgery Vol.25 No.2
In the head and neck area, there are so many sensory nerves, which are sometimes injuried iatrogenically or inadvertently so that involved patients complained of the loss of sensations. In such cases, it is important to judge the degree of injuries and regeneration of nerve for better diagnosis and treatment. Seddon and Sunderland's classification, which is commomly used, is focused on histological change and nerve conduction. As times goes by, it is difficult to access patient's sensory disturbance by this method. Until now, so many methods such as contract threshold, direction, two-point discrimination, pin prick, thermal discrimination and current perception threshold have been introduced for sensory evaluation. However, there hasn't been enough information regarding each methodology nor integrated standard methodology for the measurement. the purpose of this study is to get Korean adult normative sensory values of lower lip,chin and tongue using modified methods of contact thershold, ditection, two point discrimination, pin prick, thermal discrimination and assess degree of regeneration of sensory nerve damage.
( Seung Pill Choi ),( Jung Hee Wee ),( Jeong Ho Park ),( Chun Song Youn ),( Kyu Nam Park ) 대한응급의학회 2014 대한응급의학회 학술대회초록집 Vol.2014 No.2
Objective: It is not certain if somatosensory (SSEPs) and visual evoked potentials (VEPs) can predict neurological outcome of cardiac arrest (CA) patients treated with hypothermia. The aim of this study was to investigate the prognostic value of SSEPs and VEPs and whether VEPs would increase the predictive power of SSEPs for the patients treated with hypothermia MEthods: This retrospective cohort study included comatose patients resuscitated from CA and treated with hypothermia between March 2007 and February 2013. SSEPs and VEPs were recorded during hypothermia and after rewarming in these patients. Neurologic outcome was assessed at the time of discharge by the Cerebral Performance Category (CPC) Scale. Results: Seventy-seven patients were included. During hypothermia, absent SSEPs yielded a sensitivity of 54% and a specificity of 100% for poor outcome (CPC 3-5) and absent VEPs predicted poor outcome with a sensitivity of 48% and a specificity of 100%. Combining SSEPs and VEPs had a higher predictive power than either alone (74% sensitivity and 100% specificity). VEPs and SSEPs taken during normothermia also predicted poor outcome with a specificity of 100% and VEPs increased the predictive power of SSEPs. None of the patients with good outcome had an absent VEP in both periods but a present VEP did not indicate good neurologic outcome. Conclusions: Absent SSEPs and Absent VEPs early recorded during hypothermia retained their prognostic values for poor outcome as in normothermia. The combination of SSEPs and VEPs taken during hypothermia as well as normothermia increased their overall prognostic value.
Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM
Choi, Sara,Na, Taehui,Kim, Jisu,Kim, Jung Pill,Kang, Seung H.,Jung, Seong-Ook IEEE 2016 IEEE transactions on very large scale integration Vol.24 No.9
<P>As the technology node scales down, the spin-transfer-torque random access memory (STT-RAM) has been considered as a promising memory solution owing to its scalability. However, the increased process variation and the reduced supply voltage lead to degradation in the sensing yield (SY) as well as an increase in the read disturbance probability. Temperature variation further aggravates this phenomenon. Thus, achieving a target SY with a lower sensing current in all process, voltage, and temperature (PVT) corners has become an important issue in a deep-submicrometer technology node. In this paper, we propose a corner-aware dynamic gate voltage scheme to achieve constant-current sensing, regardless of the PVT variations. By adopting this scheme, the state-of-the-art sensing circuits (SCs) can significantly reduce the sensing current, while achieving the target read yield. The Monte Carlo HSPICE simulation results using industry-compatible 45-nm model parameters show that the offset-canceling dual-stage SC that uses the proposed scheme satisfies a target SY of six-sigma (96.34% for 32 Mb) with two times lower sensing current and two times lower read energy compared with that using a fixed gate voltage.</P>