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Seonghoon Choi,Taehee Yoo,Seul-Ki Bac,Hakjoon Lee,Sangyeop Lee,Sanghoon Lee,Liu, X.,Furdyna, J. K. IEEE 2016 IEEE transactions on magnetics Vol.52 No.7
<P>Tunneling magnetoresistance (TMR) phenomena in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions (MTJs) were investigated by rotating a magnetic field of constant strength in the film plane. When a strong field (e.g., 4000 G) is used, the magnetization in GaMnAs and Fe coherently rotates in both layers, resulting in a smooth angular dependence of TMR. In contrast, abrupt transition steps and plateaus are observed in TMR, when a weak field (below 100 G) is rotated. The behavior observed in strong fields is ascribed to tunneling anisotropic magnetoresistance, an effect that occurs when magnetizations in both magnetic layers in the MTJ are aligned parallel to each other. The tunneling behavior observed in weak fields, on the other hand, is caused by differences in relative magnetization alignments in the two layers that arise from differences in their magnetocrystalline anisotropies. The latter behavior provided the anisotropic TMR that involved with parallel and antiparallel alignments at specific crystallographic directions.</P>
Manipulation of magnetization in GaMnAs films by spin-orbit-induced magnetic fields
Lee, Sangyeop,Yoo, Taehee,Bac, Seul-Ki,Choi, Seonghoon,Lee, Hakjoon,Lee, Sanghoon,Liu, X.,Furdyna, J.K.,Dobrowolska, M. Elsevier 2017 Current Applied Physics Vol.17 No.5
<P>We have investigated the effect of spin-orbit-induced (SOI) magnetic fields on magnetization switching in GaMnAs films. The sign of such SOI fields depends on the direction of the current flowing in the film, thus providing a handle for electrically manipulating magnetization in ferromagnetic GaMnAs films. Specifically, when an applied magnetic field is swept along the current direction, magnetization reversal occurs via rotations in opposite sense (i.e., clockwise (CW) or counterclockwise (CCW)) depending on the sign of the current, thus leading to opposite signs of the planar Hall resistance (PHR) measured on the film. The effect of SOI fields also manifests itself through hysteretic behavior of PHR for two opposite currents as a fixed magnetic field is rotated in the film plane. The width of the resulting hysteresis between two current directions then allows us to estimate the magnitude of the SOI field at current density of 1.0 x 10(5) A/cm(2) as similar to 1.2 Oe in our GaMnAs film. Such switching of magnetization between two magnetic easy axes induced by switching the sign of an applied current provides a means of electronically controlling the value of film resistance (in this case of PHR), a process that can be exploited in spintronic devices. (C) 2017 Elsevier B.V. All rights reserved.</P>