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Ashish Kumar,Seema Vinayak,R. Singh 한국물리학회 2013 Current Applied Physics Vol.13 No.6
Micro-structural investigation of Ni/GaN Schottky barrier diodes has been carried out using highresolution transmission electron microscopy and electron diffraction spectrum in order to emphasize the role of Ni/GaN interface in controlling the Schottky diode behavior. Variable temperature Hall effect measurement of GaN samples along with the currentevoltage (IeV) characteristics of Ni/n-GaN Schottky barrier diodes have been measured in 100e380 K temperature range. Results are analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface. The observed anomaly of temperature dependence of Schottky barrier height and ideality factor are explained by invoking two sets of Gaussian distribution of SBH in the temperature ranges of 100e180 K and 220e380 K, respectively. The value of A** (effective Richardson constant) as determined from the modified Richardson plot is 29.2 A/(cm2 K2), which shows an excellent agreement with the theoretical value (26.4 A/(cm2 K2)) in the temperature range of 220e380 K.
Performance Enhancement of Gate-Annealed AlGaN/GaN HEMTs
Somna S. Mahajan,Amit Malik,Robert Laishram,Seema Vinayak 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.70 No.5
The electrical performances of unannealed and post gate-annealed AlGaN/GaN High Electron Mobility Transistors (HEMTs) were analyzed. A considerable improvement in HEMT parameters such as the drain source current (Ids), transconductance (gm), gate reverse leakage current (Ir) and off-state breakdown voltage (Vboff ) were observed in optimally post gate-annealed HEMT devices. The improvement in the device parameters was correlated with the combined effects of an improved electron mobility and the removal of interface inhomogenity in the gated region as a result of gate annealing. The gate-annealed HEMTs, thus, delivered an output power of 5 W/mm at the S and the C bands.