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あぁかがさざただなはばぱまやゃらわゎんいぃきぎしじちぢにひびぴみりうぅくぐすずつづっぬふぶぷむゆゅるえぇけげせぜてでねへべぺめれおぉこごそぞとどのほぼぽもよょろを

アァカサザタダナハバパマヤャラワヮンイィキギシジチヂニヒビピミリウゥクグスズツヅッヌフブプムユュルエェケゲセゼテデヘベペメレオォコゴソゾトドノホボポモヨョロヲ ―

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Α Β Γ Δ Ε Ζ Η Θ Ι Κ Λ Μ Ν Ξ Ο Π Ρ Σ Τ Υ Φ Χ Ψ Ω α β γ δ ε ζ η θ ι κ λ μ ν ξ ο π ρ σ τ υ φ χ ψ ω

á à Á À é è É È ç Ç ê

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± × ÷ ≠ ≤ ≥ ∞ ∴ ♂ ♀ ∠ ⊥ ⌒ ∂ ∇ ≡ ≒ ≪ ≫ √ ∽ ∝ ∵ ∫ ∬ ∈ ∋ ⊆ ⊇ ⊂ ⊃ ∪ ∩ ∧ ∨ ￢ ⇒ ⇔ ∀ ∃ ∮ ∑ ∏ ＋－＜＝＞

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1
Design of nanocapacitors and associated materials challenges

S. Ramesh Ekanayake,Michael J. Ford,Michael B. Cortie 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
The International Technology Roadmap for Semiconductors (ITRS) projects that the spatial resolution of feature sizes inintegrated circuits is rapidly approaching nanoscopic dimensions. Consequently, there is an active interest in the design of nanoscalecircuit elements such as transistors, resistors, andcapacitors. The properties of materials used to fabricate capacitors pose animportant design factor, as with all circuit elements. We analyze the critical materials properties that would inuence engineeringnanocapacitors (nanoscopic capacitors), and show that at nanoscale, dielectric properties (dielectric constant, dielectric strength,and dielectric relaxation) determine the practicality of such capacitors.