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Reliability Lifespan Prediction of MEMS Vertical Probe Using Various Interconnection Structures
X. L. Le(르콴러),D. T. Vuong(병득팅),M. Y. Kim(김민영),S. H. Choa(좌성훈) Korean Society for Precision Engineering 2021 한국정밀공학회 학술발표대회 논문집 Vol.2021 No.11월
In semiconductor manufacturing, wafer testing is a mandatory process to ensure yield good electrical connections on the wafer before packaging. The probe card is a specially designed device for testing electrical connection and performance on the wafer. Probe card need 500,000 to one million touchdowns on the wafer. There are many models to estimate the fatigue life of probes through the actual test. However, these methods are costly and ineffective due to the difficulty in setting the measuring system and the variable geometry of the probes. Using numerical analysis, we offer a method of estimate the fatigue life of various probes including NiCo and AgCu. This model is based on maximum von-Mises stress generated during probe and wafer contact with stress-life (S-N) data. The lifespan analysis of probe contacted with specially shaped interconnection structures such as solder ball, TSV (Through Silicon via), copper pillar bump for wafer level packaging was performed. We found that the NiCo probe has the longest lifespan when in contact with a solder ball, and the worst was when in contact with TSV. This analysis will offer a reference for the fatigue life estimation of the probe during probe card design.