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Benzothiazinones Kill Mycobacterium tuberculosis by Blocking Arabinan Synthesis
Makarov, V.,Manina, G.,Mikusova, K.,Mollmann, U.,Ryabova, O.,Saint-Joanis, B.,Dhar, N.,Pasca, M. R.,Buroni, S.,Lucarelli, A. P.,Milano, A.,De Rossi, E.,Belanova, M.,Bobovska, A.,Dianiskova, P.,Kordula American Association for the Advancement of Scienc 2009 Science Vol.324 No.5928
<P>New drugs are required to counter the tuberculosis (TB) pandemic. Here, we describe the synthesis and characterization of 1,3-benzothiazin-4-ones (BTZs), a new class of antimycobacterial agents that kill Mycobacterium tuberculosis in vitro, ex vivo, and in mouse models of TB. Using genetics and biochemistry, we identified the enzyme decaprenylphosphoryl-beta-d-ribose 2'-epimerase as a major BTZ target. Inhibition of this enzymatic activity abolishes the formation of decaprenylphosphoryl arabinose, a key precursor that is required for the synthesis of the cell-wall arabinans, thus provoking cell lysis and bacterial death. The most advanced compound, BTZ043, is a candidate for inclusion in combination therapies for both drug-sensitive and extensively drug-resistant TB.</P>
Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy
S. V. Ivanov,A. El-Shaer,M. Al-Suleiman,A. Bakin,A. Waag,O. G. Lyublinskaya,N. M. Shmidt,S. B. Listoshin,R. N. Kyutt,V. V. Ratnikov,A. Ya. Terentyev,B. Ya. Ber,T. A. Komissarova,L. I. Ryabova,D. R. Kh 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed. We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed.