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Wibowo, Rachmat Adhi,Alfaruqi, Muhammad H.,Jung, Woon-Hwa,Kim, Kyoo-Ho 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.06
Commercially available elemental powders of Cu, Zn, Sn and Se were employed for crystallizing a stannite-type Cu₂ZnSnSe₄ compound by means of solid state reaction. Cu₂ZnSnSe₄ reaction chemistry was also modeled based on differential-thermal analysis and X-ray powder diffraction results. It was observed that Se tends to react preferably with Cu to form CuSe and CuSe₂ phases at low reaction temperature. The formation of Cu<sub>5</sub>Zn_8 intermetallic phase was found to be the intermediate reaction path for the binary ZnSe formation. A solid state reaction at 320?C reacted elemental powderst obinary selenides of CuSe, ZnSe and SnSe completely. The crystallization of Cu₂ZnSnSe₄ was was detected to begin at 300?C and its weight fraction increased with an increase of reaction temperature, which most probably formed from the reaction between Cu₂SnSe₃ and ZnSe.
( Kyoo-ho Kim ),( Rachmat Adhi Wibowo ) 한국신재생에너지학회 2007 신재생에너지 Vol.3 No.4
In this paper, we report the research highlight on the preparation and characterization of Indium-free Cu<sub>2</sub>ZnSnSe<sub>4</sub> and Indium-reduced CulnZnSe<sub>2</sub> thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of Cu<sub>2</sub>ZnSnSe<sub>4</sub> and CulnZnSe<sub>2</sub> were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, Cu<sub>2</sub>ZnSnSe<sub>4</sub> and CulnZnSe<sub>2</sub> thin films grew with strong (112], (220/204) and (312/116) reflections. Both Cu<sub>2</sub>ZnSnSe<sub>4</sub> and CulnZnSe<sub>2</sub> films were found to exhibit a high absorption coefficient of 10<sup>4</sup>cm<sup>-1</sup>. Cu<sub>2</sub>ZnSnSe<sub>4</sub> film showed a band gap of 1.5 eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25 eV was found to be proportional with an increase of Zn concentration in the CulnZnSe<sub>2</sub> film. All films in this study revealed a p-type semiconductor characteristic.
Kim, Kyoo-Ho,Wibowo, Rachmat-Adhi,Munir, Badrul 한국신재생에너지학회 2005 한국신재생에너지학회 학술대회논문집 Vol.2005 No.06
Low RF power density was used for preparing transparent conducting AI-doped ZnO (AZO) thin films by RF Magnetron Sputtering on Corning 1737 glass. The dependence of films' structural, optical and electrical properties on sputtering gas, film's thickness and substrate temperature were investigated. Low percent of incorporated H2 in Ar sputtering gas has proven to reduce film's resistivity and sheet resistance as low as 4.1times10^{-3}{Omega}.cm. It also formed new preferred peaks orientation of (101) and (100) which indicated that the c-axis of AZO films was parallel to the substrate. From UN-VIS-NIR Spectrophotometer analysis, it further showed high optical transmittance at about ~ 90% at visible light spectra (400-700nm).
Sputtering Deposition of CuInSe₂ and CuInZnSe₂ Thin Films using Mixture Binary Chalcogenide Powders
국준표(Guk, Jun-Pyo),Wibowo, Rachmat Adhi,김규호(Kim, Gyu-Ho) 한국신재생에너지학회 2007 한국신재생에너지학회 학술대회논문집 Vol.2007 No.06
In this study, CuInSe₂ (CISe) and CuInZnSe₂ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of 10<sup>4</sup> cm<sup>-1</sup>. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 cm<sup>-3</sup>, a mobility about 10<sup>1</sup> cm<sup>2</sup>·<sup>-1</sup>·s<sup>-1</sup> and a resistivity at the range of 10<sup>2</sup>-10<sup>6</sup>W·m.
김규호(Kim, Gyu-Ho),Wibowo, Rachmat Adhi 한국신재생에너지학회 2007 한국신재생에너지학회 학술대회논문집 Vol.2007 No.11
In this report, Indium-free and Indium-reduced thin film materials for solar absorber were studied in order to search alternative materials for thin film solar cell. The films of Cu₂ZnSnSe₄ and Cu₂ZnSnSe₂ were deposited using mixed binary chalcogenides powders. From the film bulk analysis result, it is observed that Cu concentration is a function of substrate temperature as well as CuSe mole ratio in the target. Under optimized conditions, Cu₂ZnSnSe₄ and Cu₂ZnSnSe₂ thin films grow with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of 10⁴ cm^{-1}. Cu₂ZnSnSe₄ film shows a 1.5 eV band gap. On the other side, an increasing of optical band gap from 1.0 eV to 1.25 eV (CuInSnSe₂) is found to be proportional with an increasing of Zn concentration. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 10^{14} cm^{-3}, a mobility about 10¹ cm^{2{cdot}-1.}S^{-1} and a resistivity at the range of 10²-10<sup>6</sup> {Omega}{cdot}m.
Kyoo Ho Kim,Rachmat Adhi Wibowo,M.Hilmy Alfaruqi,Jong-Heon Ahn 한국표면공학회 2011 한국표면공학회지 Vol.44 No.5
Cu<sub>2</sub>ZnSnSe<sub>4</sub> thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized Cu<sub>2</sub>ZnSnSe<sub>4</sub> compound target. The film’s composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of Cu<sub>2</sub>ZnSnSe<sub>4</sub> thin films were above 10<SUP>4</SUP>cm<SUP>-1</SUP> with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as 10<SUP>-1</SUP>Ωcm and a carrier concentration in the order of 10<SUP>17</SUP>cm<SUP>-3</SUP>.
Kim, Kyoo-Ho,Wibowo, Rachmat Adhi 한국신재생에너지학회 2007 신재생에너지 Vol.3 No.4
In this paper, we report the research highlight on the preparation and characterization of Indium-free Cu₂ZnSnSe₄ and Indium-reduced CulnZnSe₂ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of Cu₂ZnSnSe₄;and;CulnZnSe₂ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, Cu₂ZnSnSe₄;and;CulnZnSe₂ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both Cu₂ZnSnSe₄;and;CulnZnSe₂ films were found to exhibit a high absorption coefficient of 104⁴cm^{-1};Cu₂ZnSnSe₄ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the CulnZnSe₂ film. All films in this study revealed a p-type semiconductor characteristic.
광흡수층 적용을 위한 PLD용 Cu<sub>2</sub>ZnSnSe<sub>4</sub> 타겟 제조와 증착 박막의 특성
정운화(Jung, Woon-hwa),라흐멧 아드히 위보우(Rachmat, Adhi Wibowo),김규호(Kim, Kyoo-ho) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.06
Cu₂ZnSnSe₄(CZTSe) is one of the promising materials for the solar cell due to its abundant availability in the nature. In this study, we report the fabrication of CZTSe thin film by Pulsed Laser Deposition(PLD) method using quaternary compound target on sodalime glass substrate. The quaternary CZTSe compound target was synthesized by solid state reaction method using elemental powders of Cu, Zn, Sn and Se. Powders were milled in high purity ethanol using zirconia ball with mixed size of 1 and 3 mm at the same proportions for 72 hours milling time. The structural, chemical and mechanical properties of the synthesized CZTSe powders were investigated prior to the deposition process. The CZTSe compound powder, and 500?C of sintering temperature shows the best properties for PLD target. Results show that the as-deposited CZTSe thin films with the precursors by PLD have a composition near-stoichiometric.