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      • Gate Drive Unit for a Dual-GCT

        T. Butschen,G. Sarriegi Etxeberria,H. Stagge,R.W. De Doncker 전력전자학회 2011 ICPE(ISPE)논문집 Vol.2011 No.5

        Today, Gate Commutated Thyristors (GCTs) are used in high power converters due to their high current switching and high voltage blocking capabilities. The optimization of these power switches is of utmost importance in order to increase the efficiency of the complete system. To achieve that, a novel semiconductor device was introduced, the Dual-GCT [1][2]. In this paper, a Gate Drive Unit (GDU) for the Dual-GCT is presented. Compared to standard IGCTs a size reduction of one third is achieved with equal switching capabilities. Additionally, extended functionalities that are usually not implemented in commercial drivers is introduced to obtain a better performance during the operation of the semiconductor device. Furthermore a Short Circuit Protection is described in detail which detects the short circuit in around 80 ㎱.

      • Smoothing Power Ripple in Single Phase Chargers at Minimized Dc-Link Capacitance

        M. Rosekeit,R. W. De Doncker 전력전자학회 2011 ICPE(ISPE)논문집 Vol.2011 No.5

        To be able to use film capacitances in the dc-link of single phase chargers, the needed capacity has to be reduced. This can be achieved by directly controlling the dc-link voltage with the high bandwidth of the dc-dc converter, but in this case the complete fluctuation of the grid power is seen by the battery. In order to reduce the stress on batteries through micro cycles and to increase the efficiency of the system, the power flow should be smoothed towards the battery. The control strategy presented in this paper smooths the power ripple by controlling the dclink voltage by a dynamic reference value. A method is shown to determine the reference value from the control values of the inverter in the fixed reference frame system. The strategy is analytically described and the effect is shown in simulation and by measurements on a prototype system.

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