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DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/β-Ga2O3 HEMT
R. Karpagam,S. Leones Sherwin Vimalraj,G. K. Sathishkumar,V. Megala,Y. Gowthami,B. Balaji 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.5
In this work, High Electron Mobility Transistor is grown on various Substrates such as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold voltage, whereas grown on β-gallium oxide (β-Ga2O3) to exhibit a positive threshold voltage. The optimization is done by using the pi-shaped gate and filed plate towards the drain and triple tooth metal for the proposed structure. In this, work Al0.8Ga0.2 N /AlN /GaN /AlN /Al0.4Ga0.6 N /GaN /AlN / Al0.8Ga0.2 N / β-Ga2O3 HEMT is proposed to improve the breakdown voltage, subthreshold swing. Β-Ga2O3 is prominent material to reduce the leakage current in the structure. It is observed from the obtained results that the Breakdown voltage for Si is 15 V, SiC is 20 V, Sapphire is 114 V, β-Ga2O3 is 125 V,d Unilateral power gain of 21.12dB, 19.56dB, 18.9dB, 9.5dB, at 851 GHz, 774 GHz, 738 GHz, 318 GHz when the proposed structure is grown on β-Ga2O3, SiC, Sapphire, Si substrates. In the proposed HEMT there is a compromise between frequency and breakdown voltage. If one factor improves the other reduces. But by using β-Ga2O3 as a substrate the achievement of both factors is possible. This is possible because of properly layering hetero-materials with matched lattice constant. β-Ga2O3 is a material that is a trend in the market and which resulted in intensive research. In the proposed structure Ferroelectric material i.e. lead Zirconate titanate oxide (PbZrTiO3) is used as a gate to reduce the power consumption and to increase the storage capacity in a unit area. Ferroelectric materials possess elevated dielectric constant and it has the capability of storing more charge per unit area when compared to other materials. In the small area, this material can store more data with low power consumption.
S. Suganthi,R. Karpagam 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.3
The permanent magnet synchronous motor (PMSM) is the heart of the electric drive system in electric vehicle technology. The effects of load variation and motor parameter changes are the important key challenges, which deteriorate the dynamicperformances of interior PMSM (IPMSM) drives. To overcome these issues, this study suggests the development of anefficient new control drive system by integrating the Model Reference Adaptive Control (MRAC) with a fuzzy logic controller (FLC) using a finite-element model optimized motor model. The proposed cascaded system comprises two loops: a main outer loop that runs MRAC to mitigate the effects of load variation, and a secondary inner loop with FLC for resilient performance against parametric fluctuations of the IPMSM drive system. The proposed controller uses the hybrid space vector pulse width modulation technique to regulate the switching components of the inverter. It also reduces total harmonic distortion (THD) and torque ripple during the startup of the motor. The overall examination of the PMSM drive system is accomplished by co-simulation using MATLAB and Simcenter MAGNET software. The simulated results demonstrate the superiority of the proposed fuzzy adaptive controller in terms of higher maximum torque and improved speed tracking accuracy. A prototype of the proposed PMSM is developed and validated by experiment, which shows the robustness of the proposed methodology against load and speed fluctuations by reducing THD and torque ripples.