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Development of an Extended Arc Plasma Source for Low-Pressure Surface Treatment
Vadim Yu. Plaksin,이현주,임찬주,고민국 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
This study investigated the process of silicon etching by using a high durability plasmatron with the aim of increasing the size of the plasma jet for the treatment of wider wafer surfaces Different types of plasmatron nozzles and plasma reflectors were tested. By using a two-plasmatron configuration, we succeeded in increasing the size of the etched spot by ve to ten times the size achieved using a single plasmatron. The etch rates of silicon with CF4 and O2 were 8 - 23 μm/min. By using a magnetic field the plasma ow can be intensified and declined. This allows using magnetically-controlled surface scanning for etching processes. This study investigated the process of silicon etching by using a high durability plasmatron with the aim of increasing the size of the plasma jet for the treatment of wider wafer surfaces Different types of plasmatron nozzles and plasma reflectors were tested. By using a two-plasmatron configuration, we succeeded in increasing the size of the etched spot by ve to ten times the size achieved using a single plasmatron. The etch rates of silicon with CF4 and O2 were 8 - 23 μm/min. By using a magnetic field the plasma ow can be intensified and declined. This allows using magnetically-controlled surface scanning for etching processes.
Etching of Silicon Substrates by Using a Plasmatron
Vadim Yu. Plaksin,Heon-Ju Lee,Chi Kyu Choi,Sang Beom Joa 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
An application of an arc plasma source with a low anode erosion rate allowing it to generate a nearly spectrally clean plasma flow at a lifetime of 10$^3$ $\sim$ 10$^4$ hours is proposed as a tool for plasma-chemical surface treatment. As an example, an etching process for mono-crystal silicon in a CF$_4$ plasma and for a photo-resist (PR) on a silicon wafer in an air plasma at pressures about 10$^0$ mbar were demonstrated. A macroprobe current was used as an indicator of the generated plasma activity. The dependences of the mentioned current and PR etch rate on the processing conditions are discussed and can help to assess the optimal conditions for the etching process before the wafer etching experiment.
( Patkin Dorit ),( Plaksin Olga ) 한국수학교육학회 2011 수학교육연구 Vol.15 No.4
In this paper we propose an inquiry task on the subject of congruent triangles. The task deals with conditions that are sufficient for congruency, and conditions that are insufficient. The aim of the task is to find the minimal number of identical components in two triangles that is sufficient to ensure congruency.
Self-sustained reformation of diesel fuel using a SiC block with penetrating walls
Ko, Min Kook,Plaksin, Vadim Yu.,Kim, Ji Hun,Mansur, Rakib M.,Yun, Eun Young,Mok, Young Son,Lee, Heon Ju John Wiley Sons, Ltd. 2010 International journal of energy research Vol.34 No.5
<P>Reformation of diesel fuel was performed using a silicon carbide (SiC) block with penetrating walls. The atomized fuel was spray injected to the electrically heated block. The fuel–air mixture was reformed by partial oxidation and changed to synthesis gas including CO, CO<SUB>2</SUB>, H<SUB>2</SUB>O, O<SUB>2</SUB> and H<SUB>2</SUB>. The composition of the reformed gas was measured with varying fuel–air ratios. The degree of reformation or conversion changes with the temperature and a maximum conversion efficiency of ∼90% is attained at around 850°C. Copyright © 2009 John Wiley & Sons, Ltd.</P>