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- 저자 : Pierre Legagneux (검색결과 2 건)
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Sub ppm Gas Sensing Using a CNTFET-Based Sensor Array Fabricated Using Dierent Metals as Electrodes
Paolo Bondavalli,Pierre Legagneux,Didier Pribat 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
This paper deals with the fabrication of carbon nanotube eld effect transistors (CNTFETs) for gas sensing applications. The aim of this study is to achieve a sort of fingerprinting of a specific gas by using an array of CNTFET-based sensors. The electronic ngerprinting will be obtained by exploiting the change of the metal electrode work function after gas exposure. This one strictly depends on the metal/gas interaction and consequently in uences univocally the transfer characteristics of each transistors. To demonstrate this original concept, we have fabricated different CNTFETs using different metal contacts: Au, Pt and Mo. Using these transistors, we have shown that a specific gas, in our case DiMethyl-Methyl-Phosphonate (DMMP, a sarin simulant), interacts specifically with each metal: exposure to 0.5 ppm of DMMP reduces the transistor ON current by 10 %, 60 % and 25 % after 5 minutes respectively for Au, Pt, Mo-based CNTFETs at V<SUB>GS</SUB> = -25 Volt. We think that this new approach can be applied for highly selective sensing of various gases using ultra-compact, room temperature and very low power devices. This paper deals with the fabrication of carbon nanotube eld effect transistors (CNTFETs) for gas sensing applications. The aim of this study is to achieve a sort of fingerprinting of a specific gas by using an array of CNTFET-based sensors. The electronic ngerprinting will be obtained by exploiting the change of the metal electrode work function after gas exposure. This one strictly depends on the metal/gas interaction and consequently in uences univocally the transfer characteristics of each transistors. To demonstrate this original concept, we have fabricated different CNTFETs using different metal contacts: Au, Pt and Mo. Using these transistors, we have shown that a specific gas, in our case DiMethyl-Methyl-Phosphonate (DMMP, a sarin simulant), interacts specifically with each metal: exposure to 0.5 ppm of DMMP reduces the transistor ON current by 10 %, 60 % and 25 % after 5 minutes respectively for Au, Pt, Mo-based CNTFETs at V<SUB>GS</SUB> = -25 Volt. We think that this new approach can be applied for highly selective sensing of various gases using ultra-compact, room temperature and very low power devices.
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