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Nguyen, Cam Phu Thi,Trinh, Thanh Thuy,Dao, Vinh Ai,Raja, Jayapal,Jang, Kyungsoo,Le, Tuan Anh Huy,Iftiquar, S M,Yi, Junsin Institute of Physics 2013 Semiconductor science and technology Vol.28 No.10
<P>Indium tin zinc oxide (ITZO)-based thin-film transistors (TFTs) were fabricated by dc magnetron sputtering in Ar + O<SUB>2</SUB> reactive gas, at room temperature. We present the effect of post-deposition annealing of ITZO thin films on the oxygen vacancies and on the characteristics of TFT devices. When the annealing temperature was increased from room temperature to 350 °C, the resistivity of ITZO film increased from 2.05 × 10<SUP>1</SUP> to 2.60 × 10<SUP>3</SUP> Ω cm and the interface trap density (<I>N</I><SUB>t</SUB>) of the TFTs reduced from 3.18 × 10<SUP>13</SUP> to 4.83 × 10<SUP>11</SUP> cm<SUP>−2</SUP>. The TFT with the ITZO film which was annealed at 350 °C showed a very small shift in turn-on voltage, even after applying positive bias stress of +12 V for 10<SUP>4</SUP> s. The current–voltage characteristics of 350 °C annealing temperature sample indicated that these TFTs were in an enhanced mode of transistor operation with a high on-to-off current ratio of ∼1.26 × 10<SUP>6</SUP>, high field-effect mobility of 14.17 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, and low subthreshold slope of 1.23 V/dec. The trapping time reduced from 3720 to 1546 s as the annealing temperature increased from room temperature to 350 °C. These results suggest that thermal annealing played an important role in reducing defects as well as improvement in stability of the TFTs.</P>
Fabrication of ZnO nanorods for gas sensing applications using hydrothermal method.
Nguyen, Cam Phu Thi,La, Phan Phuong Ha,Trinh, Thanh Thuy,Le, Tuan Anh Huy,Bong, Sungjae,Jang, Kyungsoo,Ahn, Shihyun,Yi, Junsin American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.8
<P>We showed well-aligned zinc oxide (ZnO) nanorod arrays synthesized using hydrothermal method at atmospheric pressure. The influence of fabrication conditions such as Zn2+/hexamethylentriamin concentration ratio, and growth temperature on the formation of ZnO nanorods was investigated. Scanning Electron Microscope (SEM) images and X-ray Diffraction (XRD) analysis were used to confirm the single crystal of ZnO nanorods, which showed wurtzite structure with growth direction of [0001] (the c-axis). Photoluminescence (PL) measurements of ZnO nanorods revealed an intense ultraviolet peak at 388.5 nm (3.19 eV) at room temperature. The results showed that the ZnO seed layers had strong influence on the growth of vertically aligned ZnO nanorods. The gas sensor based on ZnO nanorod arrays had the most selectivity with n-butanol gas (within 2 surveyed gas: ethanol and n-butanol) and showed a higher sensitivity of 222, fast response time of 15 seconds, recovery time of 110 seconds and lower operating temperature of 200-250 C than the sensor based on the ZnO film in the same detecting conditions.</P>
Nguyen, Cam Phu Thi,Raja, Jayapal,Kim, Sunbo,Jang, Kyungsoo,Le, Anh Huy Tuan,Lee, Youn-Jung,Yi, Junsin Elsevier 2017 APPLIED SURFACE SCIENCE - Vol.396 No.-
<P><B>Abstract</B></P> <P>This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95cm<SUP>2</SUP>/V·s) compared with the ITZO-only TFTs (∼34cm<SUP>2</SUP>/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and −2.39V compared with 6.10 and −6.79V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of E<SUB>A</SUB> were 0.38eV/V and 0.54eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO<SUB>2</SUB> reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The characteristics of thin film transistors using double active layers are examined. </LI> <LI> Electrical characteristics have been improved for the double active layers devices. </LI> <LI> The total trap density can be decreased by insert-ion of ultrathin ITO film. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review
Jayapal Raja,이준신,장경수,Cam Phu Thi Nguyen,Nagarajan Balaji,Shahzada Qamar Hussain,Somenath Chatterjee 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.5
Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.
Minh Sang VO,Ngoc Phu TRAN,Thi Kieu Thu NGUYEN,Thi Cam Tien HUYNH,Thi Kim Loi NGUYEN,Le Phuong Nghi THACH,Gia Nhu THAI,Thi Thanh Sang TRAN 한국유통과학회 2022 The Journal of Asian Finance, Economics and Busine Vol.9 No.4
This study intends to analyze the impact of the country of origin on the intention to ingest COVID-19 vaccinations by measuring Vietnamese people’s perceptions of India in the manufacture of COVID-19 vaccines. The research is done using a quantitative method, and primary data was obtained using a conventional manner based on the willingness of the research respondents, who are Vietnamese persons aged 18 and up, to contribute information. The findings revealed that perceived brand association and perceived brand quality directly positively impact the COVID-19 vaccine’s consumption intention and willingness. Meanwhile, while the perceived country image component has no direct effect on consumption intention, it does have a positive indirect effect on consumption intention through perceived brand linkage and perceived brand quality. The findings also emphasize the importance and significance of a country’s image in brand association and quality perception. The study’s findings imply that to increase consumers’ willingness to buy India’s COVID-19 vaccination, the country should develop communication initiatives to improve consumer perceptions of the country’s image, the perceived value of the brand association, and brand quality.