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Zhuanga, Yun,Borucki, Leonard,Philipossian, Ara,Dien, Eric,Ennahali, Mohamed,Michel, George,Laborie, Bernard,Zhuang, Yun,Keswani, Manish,Rosales-Yeomans, Daniel,Lee, Hyo-Sang,Philipossian, Ara The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.
Yun Zhuang,Leonard Borucki,Ara Philipossian,Eric Dien,Mohamed Ennahali,George Michel,Bernard Laborie,Yun Zhuang,Manish Keswani,Daniel Rosales-Yeomans,Hyosang Lee,Ara Philipossian 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an IC1000TM K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to 38.4 °C with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest p´V polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest p´V polishing condition and indicates that the polishing process was mechanical limited in the low p´V polishing region and became chemically and mechanically balanced with increasing polishing power.
Physics of the Coefficient of Friction in CMP
Borucki, Len,Philipossian, Ara,Zhuang, Yun The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
The implications of a theory of lubricated pad asperity wafer contact are traced through several fundamental areas of chemical-mechanical polishing. The hypothesized existence of a nanolubrication layer underlies a high accuracy model of polish rates. It also provides a quantitative explanation of a power law relationship between the coefficient of friction and a measure of pad surface flattening. The theory may further be useful for interpreting friction changes during polishing, and may explain why the coefficient of friction is sometimes observed to have a temperature or velocity dependence.
Physics of the Coefficient of Friction in CMP
Len Borucki,Ara Philipossian,Yun Zhuang 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
The implications of a theory of lubricated pad asperity wafer contact are traced through several fundamental areas of chemical-mechanical polishing. The hypothesized existence of a nanolubrication layer underlies a high accuracy model of polish rates. It also provides a quantitative explanation of a power law relationship between the coefficient of friction and a measure of pad surface flattening. The theory may further be useful for interpreting friction changes during polishing, and may explain why the coefficient of friction is sometimes observed to have a temperature or velocity dependence.
Study of Inhibition Characteristics of Slurry Additives inCopper CMP using Force Spectroscopy
Hyosang Lee,Ara Philipossian,Suryadevara V. Babu,Udaya B. Patri,Youngki Hong,Laertis Economikos,Michael Goldstein 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.1
Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.
Study of Inhibition Characteristics of Slurry Additives in Copper CMP using Force Spectroscopy
Lee, Hyo-Sang,Philipossian Ara,Babu Suryadevara V.,Patri Udaya B.,Hong, Young-Ki,Economikos Laertis,Goldstein Michael The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.1
Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.
Development of a Pad Conditioning Method for ILD CMP using a High Pressure Micro Jet System
Hyosang Lee,Darren DeNardis,Ara Philipossian,Yoshiyuki Seike,Mineo Takaoka,Keiji Miyachi,Toshiro Doi 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.1
The goal of this study is to determine if High Pressure Micro Jet (HPMJ) conditioning can be used as a substitute for, or in conjunction with, conventional diamond pad conditioning. Five conditioning methods were studied during which 50 ILD wafers were polished successively in a 100-mm scaled polisher and removal rate (RR), coefficient of friction (COF), pad flattening ratio (PFR) and scanning electron microscopy (SEM) measurements were obtained. Results indicated that PFR increased rapidly, and COF and removal rate decreased significantly, when conditioning was not employed. With diamond conditioning, both removal rate and COF were stable from wafer to wafer, and low PFR values were observed. SEM images indicated that clean grooves could be achieved by HPMJ pad conditioning, suggesting that HPMJ may have the potential to reduce micro scratches and defects caused by slurry abrasive particle residues inside grooves. Regardless of different pad conditioning methods, a linear correlation was observed between temperature, COF and removal rate, while an inverse relationship was seen between COF and PFR.
Thermal, Tribological, and Removal Rate Characteristics of Pad Conditioning in Copper CMP
Hyosang Lee,Darren DeNardis,Ara Philipossian,Yoshiyuki Seike,Mineo Takaoka,Keiji Miyachi,Shoichi Furukawa,Akio Terada,Yun Zhuang,Len Borucki 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
High Pressure Micro Jet (HPMJ) pad conditioning system was investigated as an alternative to diamond disc conditioning in copper CMP. A series of comparative 50-wafer marathon runs were conducted at constant wafer pressure and sliding velocity using Rohm & Haas IC1000 and Asahi-Kasei EMD Corporation (UNIPAD) concentrically grooved pads under ex-situ diamond conditioning or HPMJ conditioning. SEM images indicated that fibrous surface was restored using UNIPAD pads under both diamond and HPMJ conditioning. With IC1000 pads, asperities on the surface were significantly collapsed. This was believed to be due to differences in pad wear rates for the two conditioning methods. COF and removal rate were stable from wafer to wafer using both diamond and HPMJ conditioning when UNIPAD pads were used. Also, HPMJ conditioning showed higher COF and removal rate when compared to diamond conditioning for UNIPAD. On the other hand, COF and removal rates for IC1000 pads decreased significantly under HPMJ conditioning. Regardless of pad conditioning method adopted and the type of pad used, linear correlation was observed between temperature and COF, and removal rate and COF.
Development of a Pad Conditioning Method for ILD CMP using a High Pressure Micro Jet System
Lee, Hyo-Sang,DeNardis, Darren,Philipossian, Ara,Seike, Yoshiyuki,Takaoka, Mineo,Miyachi, Keiji,Doi, Toshiro The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.1
The goal of this study is to determine if High Pressure Micro Jet (HPMJ) conditioning can be used as a substitute for, or in conjunction with, conventional diamond pad conditioning. Five conditioning methods were studied during which 50 ILD wafers were polished successively in a 100-mm scaled polisher and removal rate (RR), coefficient of friction (COF), pad flattening ratio (PFR) and scanning electron microscopy (SEM) measurements were obtained. Results indicated that PFR increased rapidly, and COF and removal rate decreased significantly, when conditioning was not employed. With diamond conditioning, both removal rate and COF were stable from wafer to wafer, and low PFR values were observed. SEM images indicated that clean grooves could be achieved by HPMJ pad conditioning, suggesting that HPMJ may have the potential to reduce micro scratches and defects caused by slurry abrasive particle residues inside grooves. Regardless of different pad conditioning methods, a linear correlation was observed between temperature, COF and removal rate, while an inverse relationship was seen between COF and PFR.
Thermal, Tribological, and Removal Rate Characteristics of Pad Conditioning in Copper CMP
Lee, Hyo-Sang,DeNardis, Darren,Philipossian, Ara,Seike, Yoshiyuki,Takaoka, Mineo,Miyachi, Keiji,Furukawa, Shoichi,Terada, Akio,Zhuang, Yun,Borucki, Len The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
High Pressure Micro Jet (HPMJ) pad conditioning system was investigated as an alternative to diamond disc conditioning in copper CMP. A series of comparative 50-wafer marathon runs were conducted at constant wafer pressure and sliding velocity using Rohm & Haas IC1000 and Asahi-Kasei EMD Corporation (UNIPAD) concentrically grooved pads under ex-situ diamond conditioning or HPMJ conditioning. SEM images indicated that fibrous surface was restored using UNIPAD pads under both diamond and HPMJ conditioning. With IC1000 pads, asperities on the surface were significantly collapsed. This was believed to be due to differences in pad wear rates for the two conditioning methods. COF and removal rate were stable from wafer to wafer using both diamond and HPMJ conditioning when UNIPAD pads were used. Also, HPMJ conditioning showed higher COF and removal rate when compared to diamond conditioning for UNIPAD. On the other hand, COF and removal rates for IC1000 pads decreased significantly under HPMJ conditioning. Regardless of pad conditioning method adopted and the type of pad used, linear correlation was observed between temperature and COF, and removal rate and COF.