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Jutty Parthiban1,Oscar L. Alves,Komal Prasad Chandrachari,Premanand Ramani,Mehmet Zileli 대한척추신경외과학회 2019 Neurospine Vol.16 No.3
Cervical spondylotic myelopathy (CSM) is a common cause of adult spinal cord dysfunction. Although the therapeutic options for moderate to severe CSM patients have been established well, the existing guidelines for therapeutic decisions in mild cases of CSM are unclear. We present a review of literature on conservative treatment and surgery for CSM and suggest general recommendations applicable in various clinical presentations and in different geographic locations across the globe, with due considerations to available resources and locally prevalent practices.
Parthiban Pazhamalai(파자말라이 파르티반),Karthikeyan Krishnamoorthy(케이 카티케 이얀),Sindhuja Manoharan(마노하란 신드후자),Sang-Jae Kim(김상재) 대한기계학회 2021 대한기계학회 춘추학술대회 Vol.2021 No.4
Self-charging supercapacitor power cell (SCSPC) is one of the nascent areas of research for the surrogating to renewable energy resources. The prime obstacle in development SCSPC is the utilization of liquid electrolyte hinders the energy conversion efficiency which in turn creates a demand to explore and replace with new solid electrolytes for the SCSPCs. Herein, a new all solid state self-charging supercapacitor power cell (SCSPC) has been fabricated using Nafion as solid polyelectrolyte cum energy harvester and spray coated MoS2 quantum sheets (MoS2-QSs) as energy storage electrodes. The Nafion polyelectrolyte exhibits energy harvesting characteristics under mechanical deformation due to the change in ion concentration gradients between electrodes that leads to the generation of output voltage. The fabricated MoS2-Nafion-MoS2 SCSPC shows the self-charging characteristics upon various levels of compressive forces with a self-charging voltage of 243 mV. The self-charging mechanism of the fabricated MoS2-Nafion-MoS2 SCSPC is explained via piezo-ionic effect. These experimental findings have profound significance in the context of developing a potential all-in-one self-charging system.
Sputtered Deposited Carbon–Indium–Zinc Oxide Channel Layers for Use in Thin-Film Transistors
Parthiban, Shanmugam,Soo-Hyun Kim,Jang-Yeon Kwon IEEE 2014 IEEE electron device letters Vol.35 No.10
<P>We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al<SUB>2</SUB>O<SUB>3</SUB> substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm<SUP>2</SUP>/V · s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 10<SUP>7</SUP>. Moreover, the a-CIZO TFTs showed with a good bias stability.</P>