http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Plasmonically enhanced emission from a group-III nitride nanowire emitter
Mastro, Michael A,Freitas Jr, Jaime A,Glembocki, Orest,Eddy Jr, Charles R,Holm, R T,Henry, Rich L,Caldwell, Josh,Rendell, Ronald W,Kub, Fritz,Kim, J IOP Pub 2007 Nanotechnology Vol.18 No.26
<P>The plasmonic response from a nanotextured silver coating was utilized to enhance the transfer of ultraviolet light generated in a group-III nitride nanowire emitter. A two-step approach was developed in a metal–organic chemical vapour deposition system to grow nanowires initially vertically by the vapour–liquid–solid mechanism and, subsequently, laterally by increasing the growth temperature and the group-V/III reactant ratio. This controllably produced a 20 nm GaN:Si core with a 200 nm outer-diameter AlGaN:Mg sheath structure. Solvothermal chemistry based on an ethylene glycol solvent was employed to deposit a silver coating that approximated a dense packing of metallic nanospheres. Nanoscale emission and plasmonically enhanced transfer of this energy were simulated to aid the development and understanding of this system.</P>
Group III-nitride radial heterojunction nanowire light emitters
Michael A. Mastro,Josh Caldwell,Mark Twigg,Blake Simpkins,Orest Glembocki,Ron T. Holm,Charles R. Eddy, Jr.,Fritz Kub,김홍렬,Jaehui Ahn,김지현 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.6
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.