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A 4Mbps INFRARED WIRELESS COMMUNICATION SYSTEM DEDICATED TO MOBILE COMPUTING
Uno, Hiroshi,kumatani, Keiji,Okuhata, Hiroyuki,shirakawa, Isao,Chiba, Toru 대한전자공학회 1996 APCCAS:Asia Pacific Conference on Circuits And Sys Vol.1 No.1
A high performance and low power architecture is devised for a 4Mbps infrared wireless communication system dedicated to the mobile computing. In this architecture, 4PPM(4-Pulse Position Modulation) infrared signals detected by an infrared receiver are digitized into TTL interface level pulses, and the digitized pulses are demodulated by a 1-bit digital demodulator. To improve the dynamic range of the link length, a 4PPM demodulator is synthesized to implement a demodulation algorithm which is constructed so as to accommodate the output tolerance of the infrared receiver. A part of experimental results shows that the realized 4Mbps infrared communication system can achieve an error free link in the range of 0-140cm at 90mW power consumption.
Oxidation behavior of a silicon boride composite
Jun-ichi Matsushita,심광보,Koichi Niihara,Akiko Kitajima,Satoshi Okuhata,Keun Ho Auh 한양대학교 세라믹연구소 2004 Journal of Ceramic Processing Research Vol.5 No.2
The oxidation resistance of a silicon hexaboride (SiB6) composite at high temperature was investigated in order to determine the possibility of its use as an advanced high temperature structural material. Fortunately, monolithic SiB6 and its composites were known to be chemically stable up to high temperatures. To date, there have been few reports regarding the properties of SiB6 ceramics. In this study, the oxidation resistance at high temperature of a dense SiB6 composite prepared from SiB6 with the addition of 10 mass% C as starting powders has been studied. The samples were oxidized at room temperature up to 1173 K for 25 h in air. The weight changes were measured to estimate the oxidation resistance. The oxidation of samples oxidized for a short oxidation time of 5 minutes started at 973 K, and the weight gain increased with increasing oxidation temperature. On the other hand, at oxidation times of above 1 h, a maximum weight gain value at 973 K was observed. After that a SiB6 composite oxidized at 973 to 1073 K for 25 h exhibited increased weight gain with increasing oxidation temperature; the oxidation changed in accordance with the parabolic law during the initial oxidation stage. However, even if the oxidation temperature was increased only a slight additional weight change occurred. The weight gain of the sample oxidized at 1173 K for 25 h was approximately 2.5%. Finally, the SiB6 composite showed a good oxidation resistance at high temperature, because the surface oxide film formed by oxidation acted as an oxidation-resistant layer.