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HIGH TEMPERATURE STRENGTH OF HYDROGEN ANNEALED SILICON WAFER
Matsushita, J.,Xin, P.,Hayashi, K.,Fujii, O.,Kawamura, N.,Kawakami, T.,Numano, M.,Kubota, H.,Matsushita, Y. 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.1 No.1
High temperature strength of hydrogen annealed silicaon wafer was investiaged. Wafers were 150mm in diameter, Czochralski-grown(100) silicon crystal. Silicon wafers were annealed at $1200^{\circ}C$ for 1 hour in a hydrogen atmosphere with a heating rate of $10^{\circ}C/min$ and $20^{\circ}C/min$ in an hot-wall furnace. Oxygen precipitate density in slow heating rate sample and rapid heating rate sample were $2{\times}10^{9}/cm^3$ and $3{\times}10^{7}/cm^3$, respectively. Decreasing the heating rate increases the oxygen precipitate density. The strength was measured by the three-point bending test at $1000^{\circ}C$ using strip-shpaped samples cult from silicon wafer. The maximum resolved shear stress($T_{max}$) at the specimen surface converted from the maximum load was dependent on strain rate and oxygen precipitate density constained in the silicon wafer. The $T_{max}$, 20.5 MPa for as-received samples, was reduced to 17.9MPa in slow heating rate sample. On the other hand, the $T_{max}$ was almost the same as 20.3 MPa in rapid heating rate sample under a strain rate of $6.9{\times}10^{-6}/s$ at $1000^{\circ}C$.